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| PartNumber | CSD16325Q5 | CSD16325 | CSD16325C |
| Description | MOSFET N-Channel NexFET Power MOSFET | ||
| Manufacturer | Texas Instruments | TI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | E | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VSON-Clip-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 25 V | - | - |
| Id Continuous Drain Current | 60 A | - | - |
| Rds On Drain Source Resistance | 2.2 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1.1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 18 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 3.1 W | - | - |
| Configuration | Single | Single | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Reel | - |
| Height | 1 mm | - | - |
| Length | 6 mm | - | - |
| Series | CSD16325Q5 | CSD16325Q5 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Width | 5 mm | - | - |
| Brand | Texas Instruments | - | - |
| Forward Transconductance Min | 159 S | - | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 16 ns | 16 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 32 ns | 32 ns | - |
| Typical Turn On Delay Time | 10.5 ns | 10.5 ns | - |
| Unit Weight | 0.004159 oz | - | - |
| Package Case | - | VSON-Clip-8 | - |
| Pd Power Dissipation | - | 3.1 W | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 33 A | - |
| Vds Drain Source Breakdown Voltage | - | 25 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.1 V | - |
| Rds On Drain Source Resistance | - | 2.2 mOhms | - |
| Qg Gate Charge | - | 18 nC | - |
| Forward Transconductance Min | - | 159 S | - |