PartNumber | CSD16327Q3 | CSD16327Q3T | CSD16327 |
Description | MOSFET N-Channel NexFET Pwr MOSFET | MOSFET 25V, N ch NexFET MOSFETG , single SON3x3, 4.8mOhm 8-VSON-CLIP -55 to 150 | |
Manufacturer | Texas Instruments | Texas Instruments | TI |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | E | E | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | VSON-Clip-8 | VSON-Clip-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 25 V | 25 V | - |
Id Continuous Drain Current | 100 A | 60 A | - |
Rds On Drain Source Resistance | 4.8 mOhms | 4.8 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.2 V | 900 mV | - |
Vgs Gate Source Voltage | 10 V | 10 V, - 8 V | - |
Qg Gate Charge | 6.2 nC | 8.4 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 3 W | 74 W | - |
Configuration | Single | Single | Single |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Height | 1 mm | 1 mm | - |
Length | 3.3 mm | 3.3 mm | - |
Series | CSD16327Q3 | CSD16327Q3 | NexFET |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3.3 mm | 3.3 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Product Type | MOSFET | MOSFET | - |
Factory Pack Quantity | 2500 | 250 | - |
Subcategory | MOSFETs | MOSFETs | - |
Unit Weight | 0.001549 oz | 0.001570 oz | - |
Channel Mode | - | Enhancement | - |
Forward Transconductance Min | - | 96 S | - |
Fall Time | - | 6.3 ns | - |
Rise Time | - | 15 ns | - |
Typical Turn Off Delay Time | - | 13 ns | - |
Typical Turn On Delay Time | - | 5.3 ns | - |
Package Case | - | - | 8-PowerTDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-VSON (3.3x3.3) |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 3W |
Drain to Source Voltage Vdss | - | - | 25V |
Input Capacitance Ciss Vds | - | - | 1300pF @ 12.5V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 60A (Tc) |
Rds On Max Id Vgs | - | - | 4 mOhm @ 24A, 8V |
Vgs th Max Id | - | - | 1.4V @ 250μA |
Gate Charge Qg Vgs | - | - | 8.4nC @ 4.5V |
Pd Power Dissipation | - | - | 3 W |
Vgs Gate Source Voltage | - | - | 10 V |
Id Continuous Drain Current | - | - | 21 A |
Vds Drain Source Breakdown Voltage | - | - | 25 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.2 V |
Rds On Drain Source Resistance | - | - | 4 mOhms |
Qg Gate Charge | - | - | 6.2 nC |