CSD16408

CSD16408Q5 vs CSD16408Q5A vs CSD16408Q5C

 
PartNumberCSD16408Q5CSD16408Q5ACSD16408Q5C
DescriptionMOSFET N-Channel NexFET Pwr MOSFETRF Bipolar Transistors MOSFET DualCool N-Channel NexFET Power MOSFET
ManufacturerTexas Instruments-TI/BB
Product CategoryMOSFET-FETs - Single
RoHSE--
TechnologySi-Si
Mounting StyleSMD/SMT-SMD/SMT
Package / CaseVSON-Clip-8--
Number of Channels1 Channel-1 Channel
Transistor PolarityN-Channel-N-Channel
Vds Drain Source Breakdown Voltage25 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance5.4 mOhms--
Vgs th Gate Source Threshold Voltage1.8 V--
Vgs Gate Source Voltage16 V--
Qg Gate Charge6.7 nC--
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation3.1 W--
ConfigurationSingle-Single
TradenameNexFET-NexFET
PackagingReel-Reel
Height1 mm--
Length6 mm--
SeriesCSD16408Q5-CSD16408Q5C
Transistor Type1 N-Channel-1 N-Channel
Width5 mm--
BrandTexas Instruments--
Fall Time10.8 ns-10.8 ns
Product TypeMOSFET--
Rise Time25 ns-25 ns
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time11 ns-11 ns
Typical Turn On Delay Time11.3 ns-11.3 ns
Unit Weight0.003732 oz--
Package Case--VSON-Clip-8
Pd Power Dissipation--3.1 W
Vgs Gate Source Voltage--16 V
Id Continuous Drain Current--22 A
Vds Drain Source Breakdown Voltage--25 V
Vgs th Gate Source Threshold Voltage--1.8 V
Rds On Drain Source Resistance--6.8 mOhms
Qg Gate Charge--6.7 nC
Forward Transconductance Min--60 S
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD16408Q5 MOSFET N-Channel NexFET Pwr MOSFET
CSD16408Q5A New and Original
CSD16408Q5C RF Bipolar Transistors MOSFET DualCool N-Channel NexFET Power MOSFET
CSD16408Q5 RF Bipolar Transistors MOSFET N-Channel NexFET Pwr MOSFET
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