PartNumber | CSD17313Q2 | CSD17313Q | CSD17313Q2 , ZLLS350TA |
Description | MOSFET 30V N Channel NexFET Power MOSFET | ||
Manufacturer | Texas Instruments | TI | - |
Product Category | MOSFET | FETs - Single | - |
RoHS | Y | - | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | WSON-6 | - | - |
Number of Channels | 1 Channel | 1 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 5 A | - | - |
Rds On Drain Source Resistance | 30 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
Vgs Gate Source Voltage | 8 V | - | - |
Qg Gate Charge | 2.1 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 17 W | - | - |
Configuration | Single | Single | - |
Channel Mode | Enhancement | - | - |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Digi-ReelR Alternate Packaging | - |
Height | 0.75 mm | - | - |
Length | 2 mm | - | - |
Series | CSD17313Q2 | NexFET | - |
Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
Width | 2 mm | - | - |
Brand | Texas Instruments | - | - |
Development Kit | TMDSCSK388, TMDSCSK8127 | - | - |
Fall Time | 1.3 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 3.9 ns | - | - |
Factory Pack Quantity | 3000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 4.2 ns | 4.2 ns | - |
Typical Turn On Delay Time | 2.8 ns | 2.8 ns | - |
Unit Weight | 0.000307 oz | - | - |
Package Case | - | 6-WDFN Exposed Pad | - |
Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
Mounting Type | - | Surface Mount | - |
Supplier Device Package | - | 6-WSON (2x2) | - |
FET Type | - | MOSFET N-Channel, Metal Oxide | - |
Power Max | - | 2.3W | - |
Drain to Source Voltage Vdss | - | 30V | - |
Input Capacitance Ciss Vds | - | 340pF @ 15V | - |
FET Feature | - | Logic Level Gate | - |
Current Continuous Drain Id 25°C | - | 5A (Tc) | - |
Rds On Max Id Vgs | - | 30 mOhm @ 4A, 8V | - |
Vgs th Max Id | - | 1.8V @ 250μA | - |
Gate Charge Qg Vgs | - | 2.7nC @ 4.5V | - |
Pd Power Dissipation | - | 2.3 W | - |
Vgs Gate Source Voltage | - | 10 V | - |
Id Continuous Drain Current | - | 5 A | - |
Vds Drain Source Breakdown Voltage | - | 30 V | - |
Vgs th Gate Source Threshold Voltage | - | 1.3 V | - |
Rds On Drain Source Resistance | - | 26 mOhms | - |
Qg Gate Charge | - | 2.1 nC | - |
Forward Transconductance Min | - | 16 S | - |