 |  | | |
| PartNumber | CSD17313Q2 | CSD17313Q | CSD17313Q2 , ZLLS350TA |
| Description | MOSFET 30V N Channel NexFET Power MOSFET | ||
| Manufacturer | Texas Instruments | TI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | WSON-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 30 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 900 mV | - | - |
| Vgs Gate Source Voltage | 8 V | - | - |
| Qg Gate Charge | 2.1 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 17 W | - | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | - | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.75 mm | - | - |
| Length | 2 mm | - | - |
| Series | CSD17313Q2 | NexFET | - |
| Transistor Type | 1 N-Channel Power MOSFET | 1 N-Channel | - |
| Width | 2 mm | - | - |
| Brand | Texas Instruments | - | - |
| Development Kit | TMDSCSK388, TMDSCSK8127 | - | - |
| Fall Time | 1.3 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 3.9 ns | - | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 4.2 ns | 4.2 ns | - |
| Typical Turn On Delay Time | 2.8 ns | 2.8 ns | - |
| Unit Weight | 0.000307 oz | - | - |
| Package Case | - | 6-WDFN Exposed Pad | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 6-WSON (2x2) | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 2.3W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 340pF @ 15V | - |
| FET Feature | - | Logic Level Gate | - |
| Current Continuous Drain Id 25°C | - | 5A (Tc) | - |
| Rds On Max Id Vgs | - | 30 mOhm @ 4A, 8V | - |
| Vgs th Max Id | - | 1.8V @ 250μA | - |
| Gate Charge Qg Vgs | - | 2.7nC @ 4.5V | - |
| Pd Power Dissipation | - | 2.3 W | - |
| Vgs Gate Source Voltage | - | 10 V | - |
| Id Continuous Drain Current | - | 5 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Vgs th Gate Source Threshold Voltage | - | 1.3 V | - |
| Rds On Drain Source Resistance | - | 26 mOhms | - |
| Qg Gate Charge | - | 2.1 nC | - |
| Forward Transconductance Min | - | 16 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Texas Instruments |
CSD17313Q2T | MOSFET 30V, N-Channel NexFET Power Mosfet | |
| CSD17313Q2 | MOSFET 30V N Channel NexFET Power MOSFET | ||
| CSD17313Q2Q1 | MOSFET Auto 30-V N-Ch NexFET Pwr MOSFET | ||
| CSD17313Q2Q1T | MOSFET Automotive 30-V N-Channel NexFET™ Power MOSFET 6-WSON -55 to 150 | ||
| CSD17313Q | New and Original | ||
| CSD17313Q2 , ZLLS350TA | New and Original | ||
| CSD17313Q2 A09T | New and Original | ||
| CSD17313Q2Q1-1 | New and Original | ||
| CSD17313Q2Q1T | MOSFET N-CH 30V 5A 6WSON | ||
| CSD17313Q2T | MOSFET N-CH 30V 5A | ||
| CSD17313Q2 | Trans MOSFET N-CH 30V 5A 6-Pin WSON EP T/R | ||
| CSD17313Q2Q1 | MOSFET N-CH 30V 5A 6SON |