CSD17506

CSD17506Q5A vs CSD17506 vs CSD17506Q

 
PartNumberCSD17506Q5ACSD17506CSD17506Q
DescriptionMOSFET 30V,NCh NexFET Pwr MOSFET
ManufacturerTexas InstrumentsTI-
Product CategoryMOSFETFETs - Single-
RoHSE--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseVSONP-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current100 A--
Rds On Drain Source Resistance4 mOhms--
Vgs th Gate Source Threshold Voltage1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge8.3 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation3.2 W--
ConfigurationSingle--
Channel ModeEnhancement--
TradenameNexFET--
PackagingReelDigi-ReelR Alternate Packaging-
Height1 mm--
Length6 mm--
SeriesCSD17506Q5ANexFET-
Transistor Type1 N-Channel--
TypePower MOSFET--
Width4.9 mm--
BrandTexas Instruments--
Forward Transconductance Min76 S--
Fall Time5.3 ns--
Product TypeMOSFET--
Rise Time13 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time13 ns--
Typical Turn On Delay Time7.5 ns--
Package Case-8-PowerTDFN-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-VSON (5x6)-
FET Type-MOSFET N-Channel, Metal Oxide-
Power Max-3.2W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-1650pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-100A (Tc)-
Rds On Max Id Vgs-4 mOhm @ 20A, 10V-
Vgs th Max Id-1.8V @ 250μA-
Gate Charge Qg Vgs-11nC @ 4.5V-
Manufacturer Part # Description RFQ
Texas Instruments
Texas Instruments
CSD17506Q5A MOSFET 30V,NCh NexFET Pwr MOSFET
CSD17506 New and Original
CSD17506Q New and Original
CSD17506Q5A Trans MOSFET N-CH 30V 23A 8-Pin VSONP EP T/R
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