PartNumber | CSD17551Q3A | CSD17551Q5A | CSD17551 |
Description | MOSFET 30V N-Chnl MOSFET | MOSFET N-Channel NexFET Power MOSFET | |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | FETs - Single |
RoHS | Y | E | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | VSONP-8 | VSONP-8 | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 48 A | 48 A | - |
Rds On Drain Source Resistance | 9 mOhms | 11 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1.1 V | 1.7 V | - |
Vgs Gate Source Voltage | 10 V | 20 V | - |
Qg Gate Charge | 6 nC | 6 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2.6 W | 3 W | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Height | 0.9 mm | 1 mm | - |
Length | 3.15 mm | 6 mm | - |
Series | CSD17551Q3A | CSD17551Q5A | NexFET |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 3 mm | 4.9 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Forward Transconductance Min | 101 S | - | - |
Fall Time | 3.4 ns | - | 3.4 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 24 ns | - | 24 ns |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 12 ns | - | 12 ns |
Typical Turn On Delay Time | 8 ns | - | 8 ns |
Unit Weight | 0.000974 oz | - | - |
Package Case | - | - | 8-PowerVDFN |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SON (3.3x3.3) |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 2.6W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 1370pF @ 15V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 12A (Tc) |
Rds On Max Id Vgs | - | - | 9 mOhm @ 11A, 10V |
Vgs th Max Id | - | - | 2.1V @ 250μA |
Gate Charge Qg Vgs | - | - | 7.8nC @ 4.5V |
Pd Power Dissipation | - | - | 2.6 W |
Vgs Gate Source Voltage | - | - | 20 V |
Id Continuous Drain Current | - | - | 48 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 1.6 V |
Rds On Drain Source Resistance | - | - | 11.8 mOhms |
Qg Gate Charge | - | - | 6 nC |
Forward Transconductance Min | - | - | 101 S |