PartNumber | CSD19502Q5BT | CSD19502Q5B | CSD19501KCS |
Description | MOSFET N-Channel, 3.4mOhm 80V | MOSFET N-CH 3.4mOhm 80V Power MOSFET | MOSFET 80V N-CH NexFET Pwr MOSFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | E | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | Through Hole |
Package / Case | VSON-Clip-8 | VSON-Clip-8 | TO-220-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 80 V | 80 V | 80 V |
Id Continuous Drain Current | 100 A | 100 A | 100 A |
Rds On Drain Source Resistance | 4.1 mOhms | 4.1 mOhms | 6.6 mOhms |
Vgs th Gate Source Threshold Voltage | 2.2 V | 2.7 V | 2.6 V |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Qg Gate Charge | 48 nC | 48 nC | 38 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 175 C |
Pd Power Dissipation | 195 W | 3.2 W | 217 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | - |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Reel | Tube |
Height | 1 mm | 1 mm | 16.51 mm |
Length | 6 mm | 6 mm | 10.67 mm |
Series | CSD19502Q5B | CSD19502Q5B | CSD19501KCS |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 5 mm | 5 mm | 4.7 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 88 S | 88 S | 137 S |
Fall Time | 7 ns | 7 ns | 5 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 6 ns | 6 ns | 15 ns |
Factory Pack Quantity | 250 | 2500 | 50 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 22 ns | 22 ns | - |
Typical Turn On Delay Time | 8 ns | 8 ns | - |
Unit Weight | 0.004751 oz | 0.004751 oz | 0.211644 oz |