PartNumber | CSD19534Q5A | CSD19534KCS | CSD19534Q5AT |
Description | MOSFET N-Channel MOSFET | MOSFET 100V N-Channel NexFET Pwr MOSFET | MOSFET 100V, NCh NexFET |
Manufacturer | Texas Instruments | Texas Instruments | Texas Instruments |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | E | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | VSONP-8 | TO-220-3 | VSONP-8 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
Id Continuous Drain Current | 50 A | 100 A | 50 A |
Rds On Drain Source Resistance | 15.1 mOhms | 16.5 mOhms | 15.1 mOhms |
Vgs th Gate Source Threshold Voltage | 2.4 V | 2.4 V | 2.8 V |
Vgs Gate Source Voltage | 10 V | 20 V | 2.8 V |
Qg Gate Charge | 17 nC | 16.4 nC | 17 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 175 C | + 150 C |
Pd Power Dissipation | 63 W | 118 W | 63 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | - | Enhancement |
Tradename | NexFET | NexFET | NexFET |
Packaging | Reel | Tube | Reel |
Height | 1 mm | 16.51 mm | 1 mm |
Length | 6 mm | 10.67 mm | 6 mm |
Series | CSD19534Q5A | CSD19534KCS | CSD19534Q5A |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 4.9 mm | 4.7 mm | 4.9 mm |
Brand | Texas Instruments | Texas Instruments | Texas Instruments |
Forward Transconductance Min | 47 S | - | - |
Fall Time | 6 ns | 1 ns | 6 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 14 ns | 2 ns | 14 ns |
Factory Pack Quantity | 2500 | 50 | 250 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 20 ns | 9 ns | 20 ns |
Typical Turn On Delay Time | 9 ns | 6 ns | 9 ns |
Unit Weight | 0.008818 oz | 0.211644 oz | 0.000847 oz |