 |  | | |
| PartNumber | CSD25402Q3A | CSD25402Q3 | CSD25402Q3A. |
| Description | MOSFET P-CH Pwr MOSFET | ||
| Manufacturer | Texas Instruments | TI | - |
| Product Category | MOSFET | FETs - Single | - |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | VSONP-8 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | P-Channel | P-Channel | - |
| Vds Drain Source Breakdown Voltage | 20 V | - | - |
| Id Continuous Drain Current | 76 A | - | - |
| Rds On Drain Source Resistance | 8.9 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 650 mV | - | - |
| Vgs Gate Source Voltage | 4.5 V | - | - |
| Qg Gate Charge | 7.5 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 125 C | + 125 C | - |
| Pd Power Dissipation | 69 W | - | - |
| Configuration | Single | Single Channel | - |
| Channel Mode | Enhancement | Depletion | - |
| Tradename | NexFET | NexFET | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Height | 0.9 mm | - | - |
| Length | 3.15 mm | - | - |
| Series | CSD25402Q3A | NexFET | - |
| Transistor Type | 1 P-Channel Power MOSFET | 1 P-Channel | - |
| Width | 3 mm | - | - |
| Brand | Texas Instruments | - | - |
| Fall Time | 12 ns | 12 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 7 ns | 7 ns | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 25 ns | 25 ns | - |
| Typical Turn On Delay Time | 10 ns | 10 ns | - |
| Package Case | - | 8-PowerTDFN | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | 8-VSON (3.3x3.3) | - |
| FET Type | - | MOSFET P-Channel, Metal Oxide | - |
| Power Max | - | 2.8W | - |
| Drain to Source Voltage Vdss | - | 20V | - |
| Input Capacitance Ciss Vds | - | 1790pF @ 10V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 72A (Tc) | - |
| Rds On Max Id Vgs | - | 8.9 mOhm @ 10A, 4.5V | - |
| Vgs th Max Id | - | 1.15V @ 250μA | - |
| Gate Charge Qg Vgs | - | 9.7nC @ 4.5V | - |
| Pd Power Dissipation | - | 2.8 W | - |
| Vgs Gate Source Voltage | - | - 12 V | - |
| Id Continuous Drain Current | - | - 15 A | - |
| Vds Drain Source Breakdown Voltage | - | - 20 V | - |
| Vgs th Gate Source Threshold Voltage | - | - 900 mV | - |
| Rds On Drain Source Resistance | - | 8.9 mOhms | - |
| Qg Gate Charge | - | 7.5 nC | - |
| Forward Transconductance Min | - | 59 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Texas Instruments |
CSD25402Q3A | MOSFET P-CH Pwr MOSFET | |
| CSD25402Q3 | New and Original | ||
| CSD25402Q3A. | New and Original | ||
| CSD25402Q3A | Trans MOSFET P-CH 20V 35A 8-Pin VSONP EP T/R |