PartNumber | CSD88537ND | CSD88537NDT | CSD88537NDR |
Description | MOSFET 60-V Dual N-Channel Power MOSFET | MOSFET 60V Dual NCh NexFET Pwr MOSFET | |
Manufacturer | Texas Instruments | Texas Instruments | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOIC-8 | SOIC-8 | - |
Number of Channels | 2 Channel | 2 Channel | - |
Transistor Polarity | N-Channel | N-Channel | - |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
Id Continuous Drain Current | 16 A | 16 A | - |
Rds On Drain Source Resistance | 15 mOhms | 15 mOhms | - |
Vgs th Gate Source Threshold Voltage | 2.6 V | 2.6 V | - |
Vgs Gate Source Voltage | 20 V | 10 V | - |
Qg Gate Charge | 14 nC | 14 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 2.1 W | 2.1 W | - |
Configuration | Dual | Dual | - |
Channel Mode | Enhancement | Enhancement | - |
Tradename | NexFET | NexFET | - |
Packaging | Reel | Reel | - |
Height | 1.75 mm | 1.75 mm | - |
Length | 4.9 mm | 4.9 mm | - |
Series | CSD88537ND | CSD88537ND | - |
Transistor Type | 2 N-Channel | 2 N-Channel | - |
Width | 3.9 mm | 3.9 mm | - |
Brand | Texas Instruments | Texas Instruments | - |
Fall Time | 19 ns | 19 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 15 ns | 15 ns | - |
Factory Pack Quantity | 2500 | 250 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 5 ns | 5 ns | - |
Typical Turn On Delay Time | 6 ns | 6 ns | - |
Unit Weight | 0.019048 oz | 0.019048 oz | - |
Forward Transconductance Min | - | 42 S | - |
Development Kit | - | DRV8308EVM, DRV8307EVM, BOOST-DRV8711 | - |