PartNumber | CY7C1061GE-10BV1XIT | CY7C1061GE-10BVJXI | CY7C1061GE-10BV1XI |
Description | SRAM Async SRAMS | SRAM Async SRAMS | SRAM Async SRAMS |
Manufacturer | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
Product Category | SRAM | SRAM | SRAM |
RoHS | Y | Y | Y |
Memory Size | 16 Mbit | 16 Mbit | 16 Mbit |
Organization | 1 M x 16 | 1 M x 16 | 1 M x 16 |
Access Time | 10 ns | 10 ns | 10 ns |
Maximum Clock Frequency | - | - | - |
Interface Type | Parallel | Parallel | Parallel |
Supply Voltage Max | 5.5 V | 5.5 V | 5.5 V |
Supply Voltage Min | 4.5 V | 4.5 V | 4.5 V |
Supply Current Max | 110 mA | 110 mA | 110 mA |
Minimum Operating Temperature | - 40 C | - 40 C | - 40 C |
Maximum Operating Temperature | + 85 C | + 85 C | + 85 C |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | VFBGA-48 | VFBGA-48 | VFBGA-48 |
Packaging | Reel | Tray | Tray |
Memory Type | Volatile | Volatile | Volatile |
Type | Asynchronous | Asynchronous | Asynchronous |
Brand | Cypress Semiconductor | Cypress Semiconductor | Cypress Semiconductor |
Moisture Sensitive | Yes | Yes | Yes |
Product Type | SRAM | SRAM | SRAM |
Factory Pack Quantity | 2000 | 480 | 480 |
Subcategory | Memory & Data Storage | Memory & Data Storage | Memory & Data Storage |