CY7S1061GE

CY7S1061GE-10ZXI vs CY7S1061GE-10ZXIT vs CY7S1061GE30-10BVM

 
PartNumberCY7S1061GE-10ZXICY7S1061GE-10ZXITCY7S1061GE30-10BVM
DescriptionSRAM Async SRAMSSRAM Async SRAMSSRAM 16Mb Powersnooze 3.3V ERR pinMil temp
ManufacturerCypress SemiconductorCypress SemiconductorIDT (Integrated Device Technology)
Product CategorySRAMSRAMSRAM
RoHSYYN
Memory Size16 Mbit16 Mbit9 Mbit
Organization1 M x 161 M x 16256 k x 36
Access Time10 ns10 ns10 ns
Maximum Clock Frequency---
Minimum Operating Temperature- 40 C- 40 C- 40 C
Maximum Operating Temperature+ 85 C+ 85 C+ 85 C
PackagingTrayReelTray
Memory TypeVolatileVolatileSDR
TypeSynchronousSynchronousAsynchronous
BrandCypress SemiconductorCypress SemiconductorIDT
Moisture SensitiveYesYesYes
Product TypeSRAMSRAMSRAM
Factory Pack Quantity9610006
SubcategoryMemory & Data StorageMemory & Data StorageMemory & Data Storage
Interface Type--Parallel
Supply Voltage Max--2.6 V
Supply Voltage Min--2.4 V
Supply Current Max--445 mA
Mounting Style--SMD/SMT
Package / Case--CABGA-256
Height--1.4 mm
Length--17 mm
Series--70T651
Width--17 mm
Part # Aliases--70T651 IDT70T651S10BCI
Manufacturer Part # Description RFQ
Cypress Semiconductor
Cypress Semiconductor
CY7S1061GE30-10BVXIT SRAM Async SRAMS
CY7S1061GE30-10ZXI SRAM 16Mb Fast SRAM With PowerSnooze
CY7S1061GE30-10BVXI SRAM Async SRAMS
CY7S1061GE-10ZXI SRAM Async SRAMS
CY7S1061GE30-10ZXIT SRAM Async SRAMS
CY7S1061GE-10ZXIT SRAM Async SRAMS
CY7S1061GE30-10BVM SRAM 16Mb Powersnooze 3.3V ERR pinMil temp
CY7S1061GE30-10BVM 16MB POWERSNOOZE 3.3V ERR PIN MI
CY7S1061GE30-10BVXIT New and Original
CY7S1061GE-10ZXI New and Original
CY7S1061GE30-10BVXI New and Original
CY7S1061GE30-10ZXIT New and Original
CY7S1061GE-10ZXIT New and Original
CY7S1061GE30-10ZXI SRAM 16Mb Fast SRAM With PowerSnooze
CY7S1061GE-10ZXIES New and Original
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