PartNumber | D200LC40B-4000 | D2012UK | D2009UK |
Description | Bridge Rectifiers High Recovery Speed | RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz SE | RF MOSFET Transistors Silicon DMOS RF FET 10W-28V-1GHz PP |
Manufacturer | Shindengen | TT Electronics | TT Electronics |
Product Category | Bridge Rectifiers | RF MOSFET Transistors | RF MOSFET Transistors |
RoHS | Y | - | - |
Packaging | Bulk | - | - |
Product | Bridge Rectifiers | - | - |
Brand | Shindengen | Semelab / TT Electronics | Semelab / TT Electronics |
Product Type | Bridge Rectifiers | RF MOSFET Transistors | RF MOSFET Transistors |
Factory Pack Quantity | 25 | 25 | 25 |
Subcategory | Diodes & Rectifiers | MOSFETs | MOSFETs |
Transistor Polarity | - | N-Channel | N-Channel |
Technology | - | Si | Si |
Id Continuous Drain Current | - | 4 A | 2 A |
Vds Drain Source Breakdown Voltage | - | 65 V | 65 V |
Gain | - | 10 dB | 10 dB |
Output Power | - | 10 W | 10 W |
Maximum Operating Temperature | - | + 150 C | + 150 C |
Mounting Style | - | SMD/SMT | SMD/SMT |
Package / Case | - | DP | DQ |
Configuration | - | Single | Dual |
Height | - | 5.08 mm | - |
Length | - | 18.92 mm | - |
Operating Frequency | - | 1 GHz | 1 GHz |
Type | - | RF Power MOSFET | RF Power MOSFET |
Width | - | 6.35 mm | - |
Channel Mode | - | Enhancement | - |
Pd Power Dissipation | - | 42 W | 58 W |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Vgs th Gate Source Threshold Voltage | - | 1 V to 7 V | 1 V to 7 V |