DCP69-16

DCP69-16-13 vs DCP69-16 vs DCP69-16TA

 
PartNumberDCP69-16-13DCP69-16DCP69-16TA
DescriptionBipolar Transistors - BJT 1W -20V
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 20 V--
Collector Base Voltage VCBO- 25 V--
Emitter Base Voltage VEBO- 5 V--
Collector Emitter Saturation Voltage- 500 mV- 500 mV-
Maximum DC Collector Current- 2 A- 2 A-
Gain Bandwidth Product fT200 MHz200 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDCP69DCP69-
Height1.6 mm--
Length6.5 mm--
PackagingReelDigi-ReelR Alternate Packaging-
Width3.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min50 at - 5 mA, - 10 V--
Pd Power Dissipation1000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz-
Package Case-TO-261-4, TO-261AA-
Mounting Type-Surface Mount-
Supplier Device Package-SOT-223-
Power Max-1W-
Transistor Type-PNP-
Current Collector Ic Max-1A-
Voltage Collector Emitter Breakdown Max-20V-
DC Current Gain hFE Min Ic Vce-100 @ 500mA, 1V-
Vce Saturation Max Ib Ic-500mV @ 100mA, 1A-
Current Collector Cutoff Max-100nA (ICBO)-
Frequency Transition-200MHz-
Pd Power Dissipation-1000 mW-
Collector Emitter Voltage VCEO Max-- 20 V-
Collector Base Voltage VCBO-- 25 V-
Emitter Base Voltage VEBO-- 5 V-
DC Collector Base Gain hfe Min-50 at - 5 mA - 10 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DCP69-16-13 Bipolar Transistors - BJT 1W -20V
DCP69-16-13 Bipolar Transistors - BJT 1W -20V
DCP69-16 New and Original
DCP69-16TA New and Original
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