 | | | |
| PartNumber | DF200R12KE3 | DF200R12KE3HOSA1 | DF200R12PT4B6BOSA1 |
| Description | IGBT Modules 1200V 200A DUAL | IGBT MODULE VCES 1200V 200A | IGBT MODULE VCES 1200V 200A |
| Manufacturer | Infineon | - | - |
| Product Category | IGBT Modules | - | - |
| RoHS | N | - | - |
| Configuration | Single | - | - |
| Collector Emitter Voltage VCEO Max | 1200 V | - | - |
| Collector Emitter Saturation Voltage | 1.7 V | - | - |
| Continuous Collector Current at 25 C | 200 A | - | - |
| Gate Emitter Leakage Current | 400 nA | - | - |
| Pd Power Dissipation | 1.04 kW | - | - |
| Package / Case | IS5a ( 62 mm )-5 | - | - |
| Minimum Operating Temperature | - 40 C | - | - |
| Maximum Operating Temperature | + 125 C | - | - |
| Packaging | Tray | - | - |
| Height | 30.9 mm | - | - |
| Length | 106.4 mm | - | - |
| Width | 61.4 mm | - | - |
| Brand | Infineon Technologies | - | - |
| Mounting Style | Chassis Mount | - | - |
| Maximum Gate Emitter Voltage | 20 V | - | - |
| Product Type | IGBT Modules | - | - |
| Factory Pack Quantity | 10 | - | - |
| Subcategory | IGBTs | - | - |
| Part # Aliases | DF200R12KE3HOSA1 SP000100741 | - | - |
| Unit Weight | 12 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Infineon Technologies |
DF200R12W1H3_B27 | IGBT Modules | |
| DF200R12PT4_B6 | IGBT Modules | ||
| DF200R12KE3 | IGBT Modules 1200V 200A DUAL | ||
| DF200R12W1H3FB11BOMA1 | IGBT Modules LOW POWER EASY | ||
| DF200R12W1H3B27BOMA1 | IGBT MODULE VCES 1200V 200A | ||
| DF200R12W1H3FB11BOMA1 | MOD DIODE BRIDGE EASY1B-2-1 | ||
| DF200R12KE3HOSA1 | IGBT MODULE VCES 1200V 200A | ||
| DF200R12PT4B6BOSA1 | IGBT MODULE VCES 1200V 200A | ||
| DF200R12W1H3FB11BPSA1 | MOD DIODE BRIDGE EASY1B-2-1 | ||
| DF200R12W1H3_B27 | IGBT Modules | ||
| DF200R12PT4_B6 | IGBT Modules | ||
| DF200R12KE3 | IGBT Modules 1200V 200A DUAL |