PartNumber | DMB2227A-7 | DMB53D0UV-7 | DMB53D0UDW-7 |
Description | Bipolar Transistors - BJT 300mW +/-600mA | MOSFET N-CHANNEL NPN ENHANCEMENT MODE | MOSFET N-CHANNEL NPN ENHANCEMENT MODE |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | Bipolar Transistors - BJT | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-26-6 | SOT-563-6 | SOT-363-6 |
Transistor Polarity | NPN, PNP | N-Channel, NPN | N-Channel |
Configuration | Dual | Single | Single |
Collector Emitter Voltage VCEO Max | 40 V, 60 V | - | - |
Collector Base Voltage VCBO | 60 V, 75 V | - | - |
Emitter Base Voltage VEBO | 6 V | - | - |
Maximum DC Collector Current | 0.6 A | - | - |
Gain Bandwidth Product fT | 200 MHz, 300 MHz | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Series | DMB2227 | DMB53D | DMB53D |
Height | 1.1 mm | - | - |
Length | 3 mm | - | - |
Packaging | Reel | Reel | Reel |
Width | 1.6 mm | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
DC Collector/Base Gain hfe Min | 35 | - | - |
Pd Power Dissipation | 300 mW | 250 mW | 250 mW |
Product Type | BJTs - Bipolar Transistors | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | Transistors | MOSFETs | MOSFETs |
Unit Weight | 0.001058 oz | 0.000106 oz | 0.000212 oz |
Technology | - | Si | Si |
Number of Channels | - | 1 Channel | 1 Channel |
Vds Drain Source Breakdown Voltage | - | 50 V | 50 V |
Id Continuous Drain Current | - | 160 mA | 160 mA |
Rds On Drain Source Resistance | - | 3.1 Ohms | 5 Ohms |
Vgs th Gate Source Threshold Voltage | - | 700 mV | - |
Vgs Gate Source Voltage | - | 12 V | 12 V |
Channel Mode | - | Enhancement | Enhancement |
Product | - | MOSFET Small Signal | MOSFET Small Signal |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Forward Transconductance Min | - | 180 mS | - |