DMC2020

DMC202010R vs DMC2020USD-13 vs DMC2020USD

 
PartNumberDMC202010RDMC2020USD-13DMC2020USD
DescriptionBipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mmMOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
ManufacturerPanasonicDiodes Incorporated-
Product CategoryBipolar Transistors - BJTMOSFET-
RoHSYY-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-23-5SOIC-8-
Transistor PolarityNPNN-Channel, P-Channel-
ConfigurationDualDual-
Collector Emitter Voltage VCEO Max50 V--
Gain Bandwidth Product fT150 MHz--
Maximum Operating Temperature+ 150 C+ 150 C-
PackagingReelReel-
BrandPanasonicDiodes Incorporated-
Continuous Collector Current100 mA--
DC Collector/Base Gain hfe Min210--
Product TypeBJTs - Bipolar TransistorsMOSFET-
Factory Pack Quantity30002500-
SubcategoryTransistorsMOSFETs-
Technology-Si-
Number of Channels-2 Channel-
Vds Drain Source Breakdown Voltage-20 V-
Id Continuous Drain Current-8.5 A, 6.8 A-
Rds On Drain Source Resistance-20 mOhms, 33 mOhms-
Vgs th Gate Source Threshold Voltage-500 mV, 400 mV-
Vgs Gate Source Voltage-4.5 V-
Qg Gate Charge-11.6 nC, 8 nC-
Minimum Operating Temperature-- 55 C-
Pd Power Dissipation-1.8 W-
Channel Mode-Enhancement-
Series-DMC2020-
Transistor Type-1 N-Channel, 1 P-Channel-
Fall Time-12.33 ns, 42.4 ns-
Rise Time-12.49 ns, 12.4 ns-
Typical Turn Off Delay Time-35.89 ns, 94.1 ns-
Typical Turn On Delay Time-11.67 ns, 16.8 ns-
Unit Weight-0.002610 oz-
Manufacturer Part # Description RFQ
Panasonic
Panasonic
DMC202010R Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
Diodes Incorporated
Diodes Incorporated
DMC2020USD-13 MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
DMC2020USD-13-CUT TAPE New and Original
DMC2020USD-13 Darlington Transistors MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet
DMC2020USD New and Original
DMC2020USD-13-F New and Original
Panasonic
Panasonic
DMC202010R Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm
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