PartNumber | DMC202010R | DMC2020USD-13 | DMC2020USD |
Description | Bipolar Transistors - BJT COMPOSITE TRANSISTOR GL WNG 2.9x2.8mm | MOSFET 20V Comp Pair ENH 2kV ESD SO-8 Mosfet | |
Manufacturer | Panasonic | Diodes Incorporated | - |
Product Category | Bipolar Transistors - BJT | MOSFET | - |
RoHS | Y | Y | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SOT-23-5 | SOIC-8 | - |
Transistor Polarity | NPN | N-Channel, P-Channel | - |
Configuration | Dual | Dual | - |
Collector Emitter Voltage VCEO Max | 50 V | - | - |
Gain Bandwidth Product fT | 150 MHz | - | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Packaging | Reel | Reel | - |
Brand | Panasonic | Diodes Incorporated | - |
Continuous Collector Current | 100 mA | - | - |
DC Collector/Base Gain hfe Min | 210 | - | - |
Product Type | BJTs - Bipolar Transistors | MOSFET | - |
Factory Pack Quantity | 3000 | 2500 | - |
Subcategory | Transistors | MOSFETs | - |
Technology | - | Si | - |
Number of Channels | - | 2 Channel | - |
Vds Drain Source Breakdown Voltage | - | 20 V | - |
Id Continuous Drain Current | - | 8.5 A, 6.8 A | - |
Rds On Drain Source Resistance | - | 20 mOhms, 33 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 500 mV, 400 mV | - |
Vgs Gate Source Voltage | - | 4.5 V | - |
Qg Gate Charge | - | 11.6 nC, 8 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Pd Power Dissipation | - | 1.8 W | - |
Channel Mode | - | Enhancement | - |
Series | - | DMC2020 | - |
Transistor Type | - | 1 N-Channel, 1 P-Channel | - |
Fall Time | - | 12.33 ns, 42.4 ns | - |
Rise Time | - | 12.49 ns, 12.4 ns | - |
Typical Turn Off Delay Time | - | 35.89 ns, 94.1 ns | - |
Typical Turn On Delay Time | - | 11.67 ns, 16.8 ns | - |
Unit Weight | - | 0.002610 oz | - |