DMC4029SS

DMC4029SSDQ-13 vs DMC4029SSD-13 vs DMC4029SSD

 
PartNumberDMC4029SSDQ-13DMC4029SSD-13DMC4029SSD
DescriptionMOSFET Comp ENH FET 40VDs 20Vgs 1.3WMOSFET Comp ENH FET 40VDs 20Vgs 1.3W
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETFETs - Arrays
RoHSYY-
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSO-8SO-8-
Number of Channels2 Channel2 Channel2 Channel
Transistor PolarityN-Channel, P-ChannelN-Channel, P-ChannelN-Channel P-Channel
Vds Drain Source Breakdown Voltage40 V40 V-
Id Continuous Drain Current7 A5.1 A, 7 A-
Rds On Drain Source Resistance20 mOhms, 40 mOhms24 mOhms, 45 mOhms-
Vgs th Gate Source Threshold Voltage3 V3 V-
Vgs Gate Source Voltage20 V20 V-
Qg Gate Charge19.1 nC, 21.5 nC8.8 nC, 21.5 nC-
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation1.8 W1.3 W-
ConfigurationDualDual1 N-Channel 1 P-Channel
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101--
PackagingReelReelDigi-ReelR Alternate Packaging
SeriesDMC4029DMC4029DMC4029
Transistor Type1 N-Channel, 1 P-Channel--
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time4.8 ns, 25.5 ns4.8 ns, 25.5 ns4.8 ns 25.5 ns
Product TypeMOSFETMOSFET-
Rise Time7.1 ns, 19.6 ns7.1 ns, 19.6 ns7.1 ns 19.6 ns
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time15.1 ns, 34.9 ns15.1 ns, 34.9 ns15.1 ns 34.9 ns
Typical Turn On Delay Time5.3 ns, 8.7 ns5.3 ns, 8.7 ns5.3 ns 8.7 ns
Unit Weight0.002610 oz0.002610 oz0.002610 oz
Forward Transconductance Min---
Package Case--8-SOIC (0.154", 3.90mm Width)
Operating Temperature---55°C ~ 150°C (TJ)
Mounting Type--Surface Mount
Supplier Device Package--8-SOIC
FET Type--N and P-Channel
Power Max--1.3W
Drain to Source Voltage Vdss--40V
Input Capacitance Ciss Vds--1060pF @ 20V
FET Feature--Logic Level Gate
Current Continuous Drain Id 25°C--7A, 5.1A
Rds On Max Id Vgs--24 mOhm @ 6A, 10V
Vgs th Max Id--3V @ 250μA
Gate Charge Qg Vgs--19.1nC @ 10V
Pd Power Dissipation--1.3 W
Vgs Gate Source Voltage--+/- 20 V
Id Continuous Drain Current--- 5.1 A 7 A
Vds Drain Source Breakdown Voltage---40 V 40 V
Vgs th Gate Source Threshold Voltage--- 3 V 3 V
Rds On Drain Source Resistance--24 mOhms 45 mOhms
Qg Gate Charge--8.8 nC 21.5 nC
Forward Transconductance Min---
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMC4029SSDQ-13 MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
DMC4029SSD-13 MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
DMC4029SSD-13 MOSFET Comp ENH FET 40VDs 20Vgs 1.3W
DMC4029SSD New and Original
DMC4029SSDQ-13 Trans MOSFET N/P-CH 40V 7A/5.1A 8-Pin SO T/R
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