PartNumber | DMC4029SSDQ-13 | DMC4029SSD-13 | DMC4029SSD |
Description | MOSFET Comp ENH FET 40VDs 20Vgs 1.3W | MOSFET Comp ENH FET 40VDs 20Vgs 1.3W | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | FETs - Arrays |
RoHS | Y | Y | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | - |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel P-Channel |
Vds Drain Source Breakdown Voltage | 40 V | 40 V | - |
Id Continuous Drain Current | 7 A | 5.1 A, 7 A | - |
Rds On Drain Source Resistance | 20 mOhms, 40 mOhms | 24 mOhms, 45 mOhms | - |
Vgs th Gate Source Threshold Voltage | 3 V | 3 V | - |
Vgs Gate Source Voltage | 20 V | 20 V | - |
Qg Gate Charge | 19.1 nC, 21.5 nC | 8.8 nC, 21.5 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.8 W | 1.3 W | - |
Configuration | Dual | Dual | 1 N-Channel 1 P-Channel |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Digi-ReelR Alternate Packaging |
Series | DMC4029 | DMC4029 | DMC4029 |
Transistor Type | 1 N-Channel, 1 P-Channel | - | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 4.8 ns, 25.5 ns | 4.8 ns, 25.5 ns | 4.8 ns 25.5 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.1 ns, 19.6 ns | 7.1 ns, 19.6 ns | 7.1 ns 19.6 ns |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 15.1 ns, 34.9 ns | 15.1 ns, 34.9 ns | 15.1 ns 34.9 ns |
Typical Turn On Delay Time | 5.3 ns, 8.7 ns | 5.3 ns, 8.7 ns | 5.3 ns 8.7 ns |
Unit Weight | 0.002610 oz | 0.002610 oz | 0.002610 oz |
Forward Transconductance Min | - | - | - |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SOIC |
FET Type | - | - | N and P-Channel |
Power Max | - | - | 1.3W |
Drain to Source Voltage Vdss | - | - | 40V |
Input Capacitance Ciss Vds | - | - | 1060pF @ 20V |
FET Feature | - | - | Logic Level Gate |
Current Continuous Drain Id 25°C | - | - | 7A, 5.1A |
Rds On Max Id Vgs | - | - | 24 mOhm @ 6A, 10V |
Vgs th Max Id | - | - | 3V @ 250μA |
Gate Charge Qg Vgs | - | - | 19.1nC @ 10V |
Pd Power Dissipation | - | - | 1.3 W |
Vgs Gate Source Voltage | - | - | +/- 20 V |
Id Continuous Drain Current | - | - | - 5.1 A 7 A |
Vds Drain Source Breakdown Voltage | - | - | -40 V 40 V |
Vgs th Gate Source Threshold Voltage | - | - | - 3 V 3 V |
Rds On Drain Source Resistance | - | - | 24 mOhms 45 mOhms |
Qg Gate Charge | - | - | 8.8 nC 21.5 nC |
Forward Transconductance Min | - | - | - |