PartNumber | DMC6040SSDQ-13 | DMC6040SSD-13 | DMC6070LFDH-7 |
Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET 31V to 100V Comp Pair Enh FET 60V | MOSFET MOSFET BVDSS:41V-60V Power DI3030-8 |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SO-8 | SO-8 | DFN3030-8 |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.002610 oz | 0.002610 oz | 0.000705 oz |
RoHS | - | Y | Y |
Number of Channels | - | 2 Channel | 2 Channel |
Transistor Polarity | - | N-Channel, P-Channel | N-Channel, P-Channel |
Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
Id Continuous Drain Current | - | 5.1 A, 3.1 A | 3.1 A, 2.4 A |
Rds On Drain Source Resistance | - | 55 mOhms, 130 mOhms | 120 mOhms, 250 mOhms |
Vgs th Gate Source Threshold Voltage | - | 3 V | - |
Vgs Gate Source Voltage | - | 20 V | - |
Qg Gate Charge | - | 20.8 nC, 9.5 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 1.56 W | - |
Configuration | - | Dual | Dual |
Channel Mode | - | Enhancement | - |
Series | - | DMC6040 | DMC6070 |
Transistor Type | - | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
Fall Time | - | 4.3 nS, 26.1 nS | - |
Rise Time | - | 1.8 ns, 6.3 ns | - |
Typical Turn Off Delay Time | - | 20.1 nS, 58.7 nS | - |
Typical Turn On Delay Time | - | 3.6 nS, 3.7 nS | - |