PartNumber | DMG3418L-7 | DMG3N60SCT | DMG3418L-13 |
Description | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W | MOSFET MOSFET BVDSS: 501V-650V | MOSFET N-Ch Enh FET 30V 12Vgss 4.0A 1.4W |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | Through Hole | SMD/SMT |
Package / Case | SOT-23-3 | TO-220AB-3 | SOT-23-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 600 V | 30 V |
Id Continuous Drain Current | 4 A | 3.3 A | 4 A |
Rds On Drain Source Resistance | 60 mOhms | 2.7 Ohms | 50 mOhms |
Vgs th Gate Source Threshold Voltage | 1.5 V | 2 V | 1.5 V |
Vgs Gate Source Voltage | 10 V | 30 V | 12 V |
Qg Gate Charge | 5.5 nC | 12.6 nC | 5.5 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.4 W | 104 W | 1.4 W |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Tube | Reel |
Series | DMG3418 | - | DMG3418 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Fall Time | 2 ns | 28 ns | 2 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 1.6 ns | 22 ns | 1.6 ns |
Factory Pack Quantity | 3000 | 50 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 10.3 ns | 34 ns | 10.3 ns |
Typical Turn On Delay Time | 1.9 ns | 10.6 ns | 1.9 ns |
Unit Weight | 0.000282 oz | 0.063493 oz | 0.000282 oz |
Tradename | - | - | PowerDI |