PartNumber | DMG1012T-13 | DMG1012T-7 | DMG1012T |
Description | MOSFET 20V N-Ch Enhance Mode MOSFET | MOSFET MOSFET N-CHANNEL SOT-523 | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | DIODES |
Product Category | MOSFET | MOSFET | IC Chips |
RoHS | Y | Y | Details |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-523-3 | SOT-523-3 | SOT-523-3 |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 630 mA | 630 mA | 630 mA |
Rds On Drain Source Resistance | 400 mOhms | 400 mOhms | 500 mOhms |
Vgs th Gate Source Threshold Voltage | 500 mV | 500 mV | - |
Vgs Gate Source Voltage | 6 V | 4.5 V | - |
Qg Gate Charge | 736.6 nC | 736.6 pC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 0.28 W | 280 mW | 280 mW |
Configuration | Single | Single | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 14 S | - | - |
Fall Time | 12.3 ns | 12.3 ns | 12.3 ns |
Product Type | MOSFET | MOSFET | - |
Rise Time | 7.4 ns | 7.4 ns | - |
Factory Pack Quantity | 10000 | 3000 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 26.7 ns | 26.7 ns | - |
Typical Turn On Delay Time | 5.1 ns | 5.1 ns | 5.1 ns |
Unit Weight | 0.000071 oz | 0.000071 oz | 0.000071 oz |
Product | - | MOSFET Small Signal | - |
Series | - | DMG1012 | DMG1012 |
Transistor Type | - | 1 N-Channel | 1 N-Channel |