PartNumber | DMG1023UV-7 | DMG1023UVQ-7 | DMG1023UVQ-13 |
Description | MOSFET MOSFET P-CHANNEL | MOSFET MOSFET BVDSS: 8V-24V | MOSFET MOSFET BVDSS: 8V-24V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-563-6 | SOT-563-6 | SOT-563-6 |
Number of Channels | 2 Channel | 1 Channel | 1 Channel |
Transistor Polarity | P-Channel | P-Channel | P-Channel |
Vds Drain Source Breakdown Voltage | 20 V | 20 V | 20 V |
Id Continuous Drain Current | 1.03 A | 1.03 A | 1.03 A |
Rds On Drain Source Resistance | 500 mOhms | 25 Ohms | 25 Ohms |
Vgs Gate Source Voltage | 6 V | 6 V | 6 V |
Qg Gate Charge | 622.4 pC | 622 pC | 622 pC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 530 mW | 530 mW | 530 mW |
Configuration | Dual | Dual | Dual |
Packaging | Reel | Reel | Reel |
Product | MOSFET Small Signal | - | - |
Series | DMG1023 | - | - |
Transistor Type | 2 P-Channel | 1 P-Channel | 1 P-Channel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 0.9 S | - | - |
Fall Time | 20.7 ns | 8.1 ns | 8.1 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 8.1 ns | 8.1 ns | 8.1 ns |
Factory Pack Quantity | 3000 | 3000 | 10000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 28.4 ns | 28.4 ns | 28.4 ns |
Typical Turn On Delay Time | 5.1 ns | 5.1 ns | 5.1 ns |
Unit Weight | 0.000106 oz | - | - |
Vgs th Gate Source Threshold Voltage | - | 500 mV | 500 mV |
Channel Mode | - | Enhancement | Enhancement |
Qualification | - | AEC-Q101 | AEC-Q101 |