DMG30

DMG301NU-13 vs DMG301NU-7 vs DMG302PU-13

 
PartNumberDMG301NU-13DMG301NU-7DMG302PU-13
DescriptionMOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32WMOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32WMOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-23-3SOT-23-3SOT-23-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelP-Channel
Vds Drain Source Breakdown Voltage25 V-25 V
Id Continuous Drain Current260 mA-17 A
Rds On Drain Source Resistance4 Ohms-13 Ohms
Vgs th Gate Source Threshold Voltage700 mV-960 mV
Vgs Gate Source Voltage4.5 V-8 V
Qg Gate Charge360 pC-350 pC
Minimum Operating Temperature- 55 C-- 55 C
Maximum Operating Temperature+ 150 C-+ 150 C
Pd Power Dissipation320 mW-450 mW
ConfigurationSingleSingleSingle
Channel ModeEnhancement-Enhancement
PackagingReelReelReel
SeriesDMG301DMG301DMG302
Transistor Type1 N-Channel1 N-Channel1 P-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min1 S--
Fall Time2.3 ns-11 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time1.8 ns-2.3 ns
Factory Pack Quantity10000300010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time6.6 ns-24.1 ns
Typical Turn On Delay Time2.9 ns-4.5 ns
Unit Weight0.000282 oz0.000282 oz0.000282 oz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMG301NU-13 MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
DMG301NU-7 MOSFET 25V N-Ch ENH FET 25Vds 8Vgs 0.32W
DMG302PU-7 MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC
DMG302PU-13 MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W
DMG301NU-13 Trans MOSFET N-CH 25V 0.26A 3-Pin SOT-23 T/R
DMG301NU-7 Trans MOSFET N-CH 25V 0.26A Automotive 3-Pin SOT-23 T/R
DMG302PU-13 MOSFET 25V P-Ch Enh Mode FET -8Vgss 0.33W
DMG302PU-7 MOSFET 25V P-Ch Enh FET 27.2pF 0.35nC
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