DMG4413LS

DMG4413LSS-13 vs DMG4413LS vs DMG4413LSS

 
PartNumberDMG4413LSS-13DMG4413LSDMG4413LSS
DescriptionMOSFET MOSFET,P-CHANNEL
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETIC Chips-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOIC-8--
Number of Channels1 Channel--
Transistor PolarityP-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current12 A--
Rds On Drain Source Resistance7.5 mOhms--
Vgs th Gate Source Threshold Voltage1.1 V--
Vgs Gate Source Voltage10 V--
Qg Gate Charge46 nC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation2.5 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReelDigi-ReelR Alternate Packaging-
ProductMOSFET Small Signal--
SeriesDMG4413L--
Transistor Type1 P-Channel--
BrandDiodes Incorporated--
Forward Transconductance Min26 S--
Fall Time66 ns--
Product TypeMOSFET--
Rise Time9 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time160 ns--
Typical Turn On Delay Time15 ns--
Unit Weight0.030018 oz--
Package Case-8-SOIC (0.154", 3.90mm Width)-
Operating Temperature--55°C ~ 150°C (TJ)-
Mounting Type-Surface Mount-
Supplier Device Package-8-SOP-
FET Type-MOSFET P-Channel, Metal Oxide-
Power Max-1.7W-
Drain to Source Voltage Vdss-30V-
Input Capacitance Ciss Vds-4965pF @ 15V-
FET Feature-Standard-
Current Continuous Drain Id 25°C-10.5A (Ta)-
Rds On Max Id Vgs-7.5 mOhm @ 13A, 10V-
Vgs th Max Id-2.1V @ 250μA-
Gate Charge Qg Vgs-46nC @ 5V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMG4413LSS-13 MOSFET MOSFET,P-CHANNEL
DMG4413LS New and Original
DMG4413LSS New and Original
DMG4413LSS-13 MOSFET P-CH 30V 10.5A SOP8L
DMG4413LSS-13-F New and Original
DMG4413LSS-13-CUT TAPE New and Original
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