 |  | | |
| PartNumber | DMG4800LSD-13 | DMG4800LSD-13 , IRFR024N | DMG4800LSD-13-F |
| Description | MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 7.5 A | - | - |
| Rds On Drain Source Resistance | 16 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 800 mV | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 8.56 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.17 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG4800 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Fall Time | 8.55 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 4.5 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 26.33 ns | - | - |
| Typical Turn On Delay Time | 5.03 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG4800LSD-13 | MOSFET Dual N-Ch 30V VDSS 25 Vgss 42A IDM | |
| DMG4800LSD-13 | Trans MOSFET N-CH 30V 7.5A Automotive 8-Pin SO T/R | ||
| DMG4800LSD-13 , IRFR024N | New and Original | ||
| DMG4800LSD-13-F | New and Original |