 |  | | |
| PartNumber | DMG6402LDM-7 | DMG6402LDM | DMG6402LDM-7-F |
| Description | MOSFET MOSFET N-CHANNEL SOT-26 | ||
| Manufacturer | Diodes Incorporated | DIODES | |
| Product Category | MOSFET | FETs - Single | IC Chips |
| RoHS | Y | - | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SOT-26-6 | - | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 30 V | - | - |
| Id Continuous Drain Current | 5.3 A | - | - |
| Rds On Drain Source Resistance | 27 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 9.2 nC | - | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 1.12 W | - | - |
| Configuration | Single | Single Quad Drain | - |
| Packaging | Reel | Digi-ReelR Alternate Packaging | - |
| Product | MOSFET Small Signal | - | - |
| Series | DMG6402 | DMG6402 | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 10 S | - | - |
| Fall Time | 2.84 ns | 2.84 ns | - |
| Product Type | MOSFET | - | - |
| Rise Time | 6.18 nS | 6.18 ns | - |
| Factory Pack Quantity | 3000 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 13.92 nS | 13.92 nS | - |
| Typical Turn On Delay Time | 3.41 ns | 3.41 ns | - |
| Package Case | - | SOT-23-6 | - |
| Operating Temperature | - | -55°C ~ 150°C (TJ) | - |
| Mounting Type | - | Surface Mount | - |
| Supplier Device Package | - | SOT-26 | - |
| FET Type | - | MOSFET N-Channel, Metal Oxide | - |
| Power Max | - | 1.12W | - |
| Drain to Source Voltage Vdss | - | 30V | - |
| Input Capacitance Ciss Vds | - | 404pF @ 15V | - |
| FET Feature | - | Standard | - |
| Current Continuous Drain Id 25°C | - | 5.3A (Ta) | - |
| Rds On Max Id Vgs | - | 27 mOhm @ 7A, 10V | - |
| Vgs th Max Id | - | 2V @ 250μA | - |
| Gate Charge Qg Vgs | - | 9.2nC @ 10V | - |
| Pd Power Dissipation | - | 1.12 W | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Id Continuous Drain Current | - | 5.3 A | - |
| Vds Drain Source Breakdown Voltage | - | 30 V | - |
| Rds On Drain Source Resistance | - | 32 mOhms | - |
| Qg Gate Charge | - | 9.2 nC | - |
| Forward Transconductance Min | - | 10 S | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMG6402LVT-7 | MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | |
| DMG6402LDM-7 | MOSFET MOSFET N-CHANNEL SOT-26 | ||
| DMG6402LDM | New and Original | ||
| DMG6402LDM-7-F | New and Original | ||
| DMG6402LVT | New and Original | ||
| DMG6402LVT-7 | Darlington Transistors MOSFET 30V N-Ch 30mOhm 10V VGS 30V 6A | ||
| DMG6402LDM-7 | Trans MOSFET N-CH 30V 5.3A Automotive 6-Pin SOT-26 T/R |