PartNumber | DMG6602SVTQ-7 | DMG6602SVT-7 | DMG6601LVT-7 |
Description | MOSFET 30V Vds 20V Vgs Complmtry Enh FET | MOSFET MOSFET BVDSS: 25V-30 5V-30V,TSOT23,3K | MOSFET 30V Comp ENH Mode 25 to 30V MosFET |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | TSOT-26-6 | TSOT-26-6 | TSOT-26-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | N-Channel, P-Channel |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | 30 V |
Id Continuous Drain Current | 3.4 A, 2.8 A | 3.4 A, 2.8 A | 3.8 A, 2.5 A |
Rds On Drain Source Resistance | 100 mOhms, 140 mOhms | 100 mOhms, 140 mOhms | 55 mOhms, 110 mOhms |
Vgs th Gate Source Threshold Voltage | 1 V, 2.3 V | - | 500 mV, 400 mV |
Vgs Gate Source Voltage | 20 V | 20 V | 10 V |
Qg Gate Charge | 9 nC, 7 nC | 9 nC | 12.3 nC, 13.8 nC |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 1.27 W | 840 mW | 1.3 W |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | Enhancement |
Qualification | AEC-Q101 | - | - |
Packaging | Reel | Reel | Reel |
Series | DMG6602 | DMG6602 | DMG6601 |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 4 S, 6 S | 4 S | - |
Fall Time | 3 ns, 13 ns | 3 ns | 15.6 ns, 2.2 ns |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 5 ns, 7.3 ns | 5 ns | 7.4 ns, 4.6 ns |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 13 ns, 20 ns | 13 ns | 31.2 ns, 18.3 ns |
Typical Turn On Delay Time | 3 ns, 4.8 ns | 3 ns | 1.6 ns, 1.7 ns |
Transistor Type | - | 1 N-Channel, 1 P-Channel | 1 N-Channel, 1 P-Channel |
Unit Weight | - | - | 0.000459 oz |