DMHC3

DMHC3025LSD-13 vs DMHC3025LSDQ-13 vs DMHC3025LSD

 
PartNumberDMHC3025LSD-13DMHC3025LSDQ-13DMHC3025LSD
DescriptionMOSFET 30V Comp ENH Mode H-Bridge 20V VGSSMOSFET 30V Comp Enh FET H-Bridge 2xN 2xP
ManufacturerDiodes IncorporatedDiodes Incorporated-
Product CategoryMOSFETMOSFET-
RoHSYY-
TechnologySiSi-
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSO-8SOIC-8-
Number of Channels4 Channel4 Channel-
Transistor PolarityN-Channel, P-ChannelN-Channel, P-Channel-
Vds Drain Source Breakdown Voltage30 V30 V-
Id Continuous Drain Current6 A, 4.2 A6 A, 4.2 A-
Rds On Drain Source Resistance25 mOhms, 50 mOhms25 mOhms, 50 mOhms-
Vgs th Gate Source Threshold Voltage1 V1 V-
Vgs Gate Source Voltage10 V10 V-
Qg Gate Charge11.7 nC, 11.4 nC11.7 nC, 11.4 nC-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
Pd Power Dissipation1.5 W1.5 W-
ConfigurationQuadQuad-
Channel ModeEnhancementEnhancement-
PackagingReelReel-
SeriesDMHC3025DMHC3025-
Transistor Type2 N-Channel, 2 P-Channel2 N-Channel, 2 P-Channel-
BrandDiodes IncorporatedDiodes Incorporated-
Fall Time8.7 ns, 13.5 ns8.7 ns, 13.5 ns-
Product TypeMOSFETMOSFET-
Rise Time15 ns, 4.9 ns15 ns, 4.9 ns-
Factory Pack Quantity25002500-
SubcategoryMOSFETsMOSFETs-
Typical Turn Off Delay Time17.5 ns, 28.2 ns17.5 ns, 28.2 ns-
Typical Turn On Delay Time11.2 ns, 7.5 ns11.2 ns, 7.5 ns-
Unit Weight0.002610 oz0.002610 oz-
Qualification-AEC-Q101-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMHC3025LSD-13 MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS
DMHC3025LSDQ-13 MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP
DMHC3025LSD New and Original
DMHC3025LSDQ-13 Trans MOSFET N/P-CH 30V 6A/4.2A Automotive 8-Pin SO T/R
DMHC3025LSDQ-7-F New and Original
DMHC3025LSD-13 Trans MOSFET N/P-CH 30V 6A/4.2A Automotive 8-Pin SO T/R
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