PartNumber | DMHC3025LSD-13 | DMHC3025LSDQ-13 | DMHC3025LSD |
Description | MOSFET 30V Comp ENH Mode H-Bridge 20V VGSS | MOSFET 30V Comp Enh FET H-Bridge 2xN 2xP | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
Product Category | MOSFET | MOSFET | - |
RoHS | Y | Y | - |
Technology | Si | Si | - |
Mounting Style | SMD/SMT | SMD/SMT | - |
Package / Case | SO-8 | SOIC-8 | - |
Number of Channels | 4 Channel | 4 Channel | - |
Transistor Polarity | N-Channel, P-Channel | N-Channel, P-Channel | - |
Vds Drain Source Breakdown Voltage | 30 V | 30 V | - |
Id Continuous Drain Current | 6 A, 4.2 A | 6 A, 4.2 A | - |
Rds On Drain Source Resistance | 25 mOhms, 50 mOhms | 25 mOhms, 50 mOhms | - |
Vgs th Gate Source Threshold Voltage | 1 V | 1 V | - |
Vgs Gate Source Voltage | 10 V | 10 V | - |
Qg Gate Charge | 11.7 nC, 11.4 nC | 11.7 nC, 11.4 nC | - |
Minimum Operating Temperature | - 55 C | - 55 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 1.5 W | 1.5 W | - |
Configuration | Quad | Quad | - |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | - |
Series | DMHC3025 | DMHC3025 | - |
Transistor Type | 2 N-Channel, 2 P-Channel | 2 N-Channel, 2 P-Channel | - |
Brand | Diodes Incorporated | Diodes Incorporated | - |
Fall Time | 8.7 ns, 13.5 ns | 8.7 ns, 13.5 ns | - |
Product Type | MOSFET | MOSFET | - |
Rise Time | 15 ns, 4.9 ns | 15 ns, 4.9 ns | - |
Factory Pack Quantity | 2500 | 2500 | - |
Subcategory | MOSFETs | MOSFETs | - |
Typical Turn Off Delay Time | 17.5 ns, 28.2 ns | 17.5 ns, 28.2 ns | - |
Typical Turn On Delay Time | 11.2 ns, 7.5 ns | 11.2 ns, 7.5 ns | - |
Unit Weight | 0.002610 oz | 0.002610 oz | - |
Qualification | - | AEC-Q101 | - |