PartNumber | DMJ70H1D3SJ3 | DMJ70H1D0SV3 | DMJ70H1D3SI3 |
Description | MOSFET MOSFET BVDSS | MOSFET MOSFETBVDSS: 651V-800V | MOSFET 700V N-Ch Enh FET 1.3Ohm 10Vgs 4.6A |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | Through Hole | Through Hole | SMD/SMT |
Package / Case | TO-251-3 | TO-251-3 | TO-252-3 |
Packaging | Tube | - | Tube |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 75 | 75 | 75 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.011993 oz | 0.011640 oz | 0.011993 oz |
Number of Channels | - | 1 Channel | - |
Transistor Polarity | - | N-Channel | - |
Vds Drain Source Breakdown Voltage | - | 700 V | - |
Id Continuous Drain Current | - | 6 A | - |
Rds On Drain Source Resistance | - | 900 mOhms | - |
Vgs th Gate Source Threshold Voltage | - | 2 V | - |
Vgs Gate Source Voltage | - | 30 V | - |
Qg Gate Charge | - | 12.8 nC | - |
Minimum Operating Temperature | - | - 55 C | - |
Maximum Operating Temperature | - | + 150 C | - |
Pd Power Dissipation | - | 104 W | - |
Configuration | - | Single | - |
Channel Mode | - | Enhancement | - |
Transistor Type | - | 1 N-Channel | - |
Fall Time | - | 3 ns | - |
Rise Time | - | 14 ns | - |
Typical Turn Off Delay Time | - | 23 ns | - |
Typical Turn On Delay Time | - | 8 ns | - |