DMJT

DMJT9435-13 vs DMJT9435 vs DMJT9435-13-79

 
PartNumberDMJT9435-13DMJT9435DMJT9435-13-79
DescriptionBipolar Transistors - BJT LOW VSAT PNP SMT
ManufacturerDiodes Incorporated-
Product CategoryBipolar Transistors - BJTTransistors (BJT) - Single-
RoHSY--
Mounting StyleSMD/SMTSMD/SMT-
Package / CaseSOT-223-4--
Transistor PolarityPNPPNP-
ConfigurationSingleSingle-
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 45 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 550 mV- 550 mV-
Maximum DC Collector Current- 5 A- 5 A-
Gain Bandwidth Product fT160 MHz160 MHz-
Minimum Operating Temperature- 55 C- 55 C-
Maximum Operating Temperature+ 150 C+ 150 C-
SeriesDMJT9435DMJT9435-
DC Current Gain hFE Max125125-
Height1.6 mm--
Length6.5 mm--
PackagingReelReel-
Width3.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min90 at 3 A, 1 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz0.000282 oz-
Package Case-SOT-223-3-
Pd Power Dissipation-2000 mW-
Collector Emitter Voltage VCEO Max-- 30 V-
Collector Base Voltage VCBO-- 45 V-
Emitter Base Voltage VEBO-- 6 V-
DC Collector Base Gain hfe Min-90 at 3 A 1 V-
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMJT9435-13 Bipolar Transistors - BJT LOW VSAT PNP SMT
DMJT9435 New and Original
DMJT9435-13-79 New and Original
DMJT9435-13-F New and Original
DMJT9435-7-F New and Original
DMJT9435-13 Bipolar Transistors - BJT LOW VSAT PNP SMT
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