DMJT9435-1

DMJT9435-13 vs DMJT9435-13-79 vs DMJT9435-13-F

 
PartNumberDMJT9435-13DMJT9435-13-79DMJT9435-13-F
DescriptionBipolar Transistors - BJT LOW VSAT PNP SMT
ManufacturerDiodes Incorporated--
Product CategoryBipolar Transistors - BJT--
RoHSY--
Mounting StyleSMD/SMT--
Package / CaseSOT-223-4--
Transistor PolarityPNP--
ConfigurationSingle--
Collector Emitter Voltage VCEO Max- 30 V--
Collector Base Voltage VCBO- 45 V--
Emitter Base Voltage VEBO- 6 V--
Collector Emitter Saturation Voltage- 550 mV--
Maximum DC Collector Current- 5 A--
Gain Bandwidth Product fT160 MHz--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
SeriesDMJT9435--
DC Current Gain hFE Max125--
Height1.6 mm--
Length6.5 mm--
PackagingReel--
Width3.5 mm--
BrandDiodes Incorporated--
DC Collector/Base Gain hfe Min90 at 3 A, 1 V--
Pd Power Dissipation2000 mW--
Product TypeBJTs - Bipolar Transistors--
Factory Pack Quantity2500--
SubcategoryTransistors--
Unit Weight0.003951 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMJT9435-13 Bipolar Transistors - BJT LOW VSAT PNP SMT
DMJT9435-13-79 New and Original
DMJT9435-13-F New and Original
DMJT9435-13 Bipolar Transistors - BJT LOW VSAT PNP SMT
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