| PartNumber | DMN10H099SK3-13 | DMN10H099SFG-7 | DMN10H099SFG-13 |
| Description | MOSFET 100V N-Ch Enh FET 20Vgs 1172pF 25.2nC | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC | MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| RoHS | Y | Y | Y |
| Technology | Si | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
| Package / Case | TO-252-3 | PowerDI3333-8 | PowerDI3333-8 |
| Number of Channels | 1 Channel | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 100 V | 100 V | 100 V |
| Id Continuous Drain Current | 17 A | 4.2 A | 4.2 A |
| Rds On Drain Source Resistance | 69 mOhms | 54 mOhms | 99 mOhms |
| Vgs th Gate Source Threshold Voltage | 2 V | 1.5 V | - |
| Vgs Gate Source Voltage | 20 V | 20 V | - |
| Qg Gate Charge | 25.2 nC | 25.2 nC | 25.2 nC |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 34 W | 980 mW | - |
| Configuration | Single | Single | Single |
| Channel Mode | Enhancement | Enhancement | Enhancement |
| Packaging | Reel | Reel | Reel |
| Series | DMN10 | DMN10 | DMN10 |
| Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Fall Time | 7.3 ns | 7.3 ns | - |
| Product Type | MOSFET | MOSFET | MOSFET |
| Rise Time | 5.9 ns | 5.9 ns | - |
| Factory Pack Quantity | 2500 | 2000 | 3000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 20 ns | 20 ns | - |
| Typical Turn On Delay Time | 5.4 ns | 5.4 ns | - |
| Tradename | - | PowerDI | PowerDI |
| Unit Weight | - | 0.002540 oz | 0.002540 oz |