PartNumber | DMN3018SSD-13 | DMN3018SSD-13-F | DMN3018SSS |
Description | MOSFET 30V Dual N-Ch Enh 22mOhm 10V 6.7A | ||
Manufacturer | Diodes Incorporated | - | Diodes Incorporated |
Product Category | MOSFET | - | FETs - Single |
RoHS | Y | - | - |
Technology | Si | - | Si |
Mounting Style | SMD/SMT | - | SMD/SMT |
Package / Case | SOIC-8 | - | - |
Number of Channels | 2 Channel | - | 2 Channel |
Transistor Polarity | N-Channel | - | N-Channel |
Vds Drain Source Breakdown Voltage | 30 V | - | - |
Id Continuous Drain Current | 6.7 A | - | - |
Rds On Drain Source Resistance | 22 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 13.2 nC | - | - |
Minimum Operating Temperature | - 55 C | - | - 55 C |
Maximum Operating Temperature | + 150 C | - | + 150 C |
Pd Power Dissipation | 1.5 W | - | - |
Configuration | Dual | - | Dual Dual Drain |
Channel Mode | Enhancement | - | Enhancement |
Packaging | Reel | - | Digi-ReelR Alternate Packaging |
Series | DMN3018 | - | DMN3018 |
Transistor Type | 2 N-Channel | - | 2 N-Channel |
Brand | Diodes Incorporated | - | - |
Fall Time | 4.1 ns | - | 4.1 ns |
Product Type | MOSFET | - | - |
Rise Time | 4.4 ns | - | 4.4 ns |
Factory Pack Quantity | 2500 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 20.1 ns | - | 20.1 ns |
Typical Turn On Delay Time | 4.3 ns | - | 4.3 ns |
Unit Weight | 0.002610 oz | - | 0.002610 oz |
Package Case | - | - | 8-SOIC (0.154", 3.90mm Width) |
Operating Temperature | - | - | -55°C ~ 150°C (TJ) |
Mounting Type | - | - | Surface Mount |
Supplier Device Package | - | - | 8-SO |
FET Type | - | - | MOSFET N-Channel, Metal Oxide |
Power Max | - | - | 1.4W |
Drain to Source Voltage Vdss | - | - | 30V |
Input Capacitance Ciss Vds | - | - | 697pF @ 15V |
FET Feature | - | - | Standard |
Current Continuous Drain Id 25°C | - | - | 7.3A (Ta) |
Rds On Max Id Vgs | - | - | 21 mOhm @ 10A, 10V |
Vgs th Max Id | - | - | 2.1V @ 250μA |
Gate Charge Qg Vgs | - | - | 13.2nC @ 10V |
Pd Power Dissipation | - | - | 1.7 W |
Vgs Gate Source Voltage | - | - | 25 V |
Id Continuous Drain Current | - | - | 9.7 A |
Vds Drain Source Breakdown Voltage | - | - | 30 V |
Vgs th Gate Source Threshold Voltage | - | - | 2.1 V |
Rds On Drain Source Resistance | - | - | 35 mOhms |
Qg Gate Charge | - | - | 6 nC |
Forward Transconductance Min | - | - | 8.3 S |