 | |  | |
| PartNumber | DMN4026SSDQ-13 | DMN4026SSD-13 | DMN4026SSD-13-F |
| Description | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Configuration | Dual | Dual | - |
| Qualification | AEC-Q101 | - | - |
| Packaging | Reel | Reel | - |
| Series | DMN40 | DMN40 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Product Type | MOSFET | MOSFET | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Vds Drain Source Breakdown Voltage | - | 40 V | - |
| Id Continuous Drain Current | - | 7 A | - |
| Rds On Drain Source Resistance | - | 20 mOhms | - |
| Vgs th Gate Source Threshold Voltage | - | 3 V | - |
| Vgs Gate Source Voltage | - | 20 V | - |
| Qg Gate Charge | - | 19.1 nC | - |
| Minimum Operating Temperature | - | - 55 C | - |
| Maximum Operating Temperature | - | + 150 C | - |
| Pd Power Dissipation | - | 1.8 W | - |
| Channel Mode | - | Enhancement | - |
| Fall Time | - | 4.8 ns | - |
| Rise Time | - | 7.1 ns | - |
| Typical Turn Off Delay Time | - | 15.1 ns | - |
| Typical Turn On Delay Time | - | 5.3 ns | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN4026SSDQ-13 | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | |
| DMN4026SSD-13 | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss | ||
| DMN4026SSD-13 | MOSFET 2N-CH 40V 7A 8SO | ||
| DMN4026SSD-13-F | New and Original | ||
| DMN4026SSDQ-13 | MOSFET N-Ch Enh Mode FET 40Vdss 20Vgss |