 | |  | |
| PartNumber | DMN4031SSD-13 | DMN4031SSDQ-13 | DMN4031SSD |
| Description | MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K | MOSFET Dual N-Ch Enh FET 40V 20Vgss 20A | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | SO-8 | SO-8 | - |
| Number of Channels | 2 Channel | 2 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 40 V | - | - |
| Id Continuous Drain Current | 7 A | - | - |
| Rds On Drain Source Resistance | 31 mOhms | - | - |
| Vgs Gate Source Voltage | 20 V | - | - |
| Qg Gate Charge | 18.6 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.42 W | - | - |
| Configuration | Dual | Dual | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | Reel | - |
| Series | DMN40 | DMN4031 | - |
| Transistor Type | 2 N-Channel | 2 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Forward Transconductance Min | 11 S | - | - |
| Fall Time | 3.1 ns | - | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 9.7 ns | - | - |
| Factory Pack Quantity | 2500 | 2500 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 19.8 ns | - | - |
| Typical Turn On Delay Time | 6.4 ns | - | - |
| Unit Weight | 0.002610 oz | 0.002610 oz | - |
| Qualification | - | AEC-Q101 | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN4031SSD-13 | MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K | |
| DMN4031SSDQ-13 | MOSFET Dual N-Ch Enh FET 40V 20Vgss 20A | ||
| DMN4031SSD | New and Original | ||
| DMN4031SSDQ-13-F | New and Original | ||
| DMN4031SSDQ-13 | MOSFET 2N-CH 40V 5.2A 8SOIC | ||
| DMN4031SSD-13 | Darlington Transistors MOSFET MOSFET BVDSS: 31V-40 SO-8,2.5K |