DMN4800LS

DMN4800LSS-13 vs DMN4800LS vs DMN4800LSS

 
PartNumberDMN4800LSS-13DMN4800LSDMN4800LSS
DescriptionMOSFET N-CHAN ENHNCMNT MODE
ManufacturerDiodes IncorporatedDIODES-
Product CategoryMOSFETFETs - Single-
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSO-8--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage30 V--
Id Continuous Drain Current8.6 A--
Rds On Drain Source Resistance20 mOhms--
Vgs Gate Source Voltage25 V--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation1.46 W--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1.5 mm--
Length4.95 mm--
ProductMOSFET Small Signal--
SeriesDMN48--
Transistor Type1 N-Channel--
Width3.95 mm--
BrandDiodes Incorporated--
Fall Time4.5 ns--
Product TypeMOSFET--
Rise Time4.5 ns--
Factory Pack Quantity2500--
SubcategoryMOSFETs--
Typical Turn Off Delay Time26.33 ns--
Typical Turn On Delay Time5.03 ns--
Unit Weight0.002610 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN4800LSSL-13 MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
DMN4800LSS-13 MOSFET N-CHAN ENHNCMNT MODE
DMN4800LSSQ-13 MOSFET 30V N-Ch Enh FET 25Vgs 9A 16mOhm 1.6V
DMN4800LS New and Original
DMN4800LSS New and Original
DMN4800LSSL MOSFET, N CHANNEL, W DIODE, 30V, 8A, SO8, Transistor Polarity:N Channel, Continuous Drain Current Id:6.7A, Drain Source Voltage Vds:30V, On Resistance Rds(on):0.011ohm, Rds(on) Test Voltage Vgs:1
DMN4800LSSL-13-F New and Original
DMN4800LSSQ-13 MOSFET BVDSS: 25V 30V SO-8 T&R
DMN4800LSSL-13 Darlington Transistors MOSFET MOSFET BVDSS: 25V-30 SO-8,2.5K
DMN4800LSS-13 Trans MOSFET N-CH 30V 8.6A Automotive 8-Pin SOP T/R
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