PartNumber | DMN5L06DWK-7 | DMN5L06DMK-7 | DMN5L06DMKQ-7 |
Description | MOSFET Dual N-Channel | MOSFET Dual N-Channel | MOSFET Dual N-Ch Enh FET 50Vdss 20Vgss 400mW |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-26-6 | SOT-26-6 |
Number of Channels | 2 Channel | 2 Channel | 2 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 50 V | 50 V | - |
Id Continuous Drain Current | 305 mA | 305 mA | - |
Rds On Drain Source Resistance | 2 Ohms | 2 Ohms | - |
Vgs th Gate Source Threshold Voltage | 490 mV | 490 mV | - |
Vgs Gate Source Voltage | 5 V | 5 V | - |
Qg Gate Charge | 0.4 nC | - | - |
Minimum Operating Temperature | - 65 C | - 65 C | - |
Maximum Operating Temperature | + 150 C | + 150 C | - |
Pd Power Dissipation | 250 mW | 400 mW | - |
Configuration | Dual | Dual | Dual |
Channel Mode | Enhancement | Enhancement | - |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 1.1 mm | - |
Length | 2.2 mm | 3 mm | - |
Product | MOSFET Small Signal | MOSFET Small Signal | - |
Series | DMN5L06 | DMN5L06 | DMN5L06 |
Transistor Type | 2 N-Channel | 2 N-Channel | 2 N-Channel |
Width | 1.35 mm | 1.6 mm | - |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Forward Transconductance Min | 200 mS | 200 mS | - |
Fall Time | 8.4 ns | - | - |
Product Type | MOSFET | MOSFET | MOSFET |
Rise Time | 1.8 ns | - | - |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 14.4 ns | - | - |
Typical Turn On Delay Time | 2.1 ns | - | - |
Unit Weight | 0.000212 oz | 0.000529 oz | 0.000529 oz |
Qualification | - | - | AEC-Q101 |