DMN5L06DWK-7

DMN5L06DWK-7 vs DMN5L06DWK-7,2SK2158-T1B vs DMN5L06DWK-7,2SK2158-T1B,AME8841REHA

 
PartNumberDMN5L06DWK-7DMN5L06DWK-7,2SK2158-T1BDMN5L06DWK-7,2SK2158-T1B,AME8841REHA
DescriptionMOSFET Dual N-Channel
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-363-6--
Number of Channels2 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current305 mA--
Rds On Drain Source Resistance2 Ohms--
Vgs th Gate Source Threshold Voltage490 mV--
Vgs Gate Source Voltage5 V--
Qg Gate Charge0.4 nC--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 mW--
ConfigurationDual--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.2 mm--
ProductMOSFET Small Signal--
SeriesDMN5L06--
Transistor Type2 N-Channel--
Width1.35 mm--
BrandDiodes Incorporated--
Forward Transconductance Min200 mS--
Fall Time8.4 ns--
Product TypeMOSFET--
Rise Time1.8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14.4 ns--
Typical Turn On Delay Time2.1 ns--
Unit Weight0.000212 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN5L06DWK-7 MOSFET Dual N-Channel
DMN5L06DWK-7-01 MOSFET MOSFET BVDSS: 41V~60V SOT363 T&R 3K
DMN5L06DWK-7,2SK2158-T1B New and Original
DMN5L06DWK-7,2SK2158-T1B,AME8841REHA New and Original
DMN5L06DWK-7-01 Trans MOSFET Array N-CH 50V 305mA 6-Pin SOT-363 T/R - Tape and Reel (Alt: DMN5L06DWK-7-01)
DMN5L06DWK-7-F New and Original
DMN5L06DWK-7DIODES New and Original
DMN5L06DWK-7-CUT TAPE New and Original
DMN5L06DWK-7 MOSFET 2N-CH 50V 0.305A SOT-363
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