DMN5L06WK-7

DMN5L06WK-7 vs DMN5L06WK-7-F vs DMN5L06WK-7-CUT TAPE

 
PartNumberDMN5L06WK-7DMN5L06WK-7-FDMN5L06WK-7-CUT TAPE
DescriptionMOSFET N-Channel
ManufacturerDiodes Incorporated--
Product CategoryMOSFET--
RoHSY--
TechnologySi--
Mounting StyleSMD/SMT--
Package / CaseSOT-323-3--
Number of Channels1 Channel--
Transistor PolarityN-Channel--
Vds Drain Source Breakdown Voltage50 V--
Id Continuous Drain Current300 mA--
Rds On Drain Source Resistance2 Ohms--
Vgs th Gate Source Threshold Voltage490 mV--
Vgs Gate Source Voltage5 V--
Minimum Operating Temperature- 65 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation250 mW--
ConfigurationSingle--
Channel ModeEnhancement--
PackagingReel--
Height1 mm--
Length2.15 mm--
ProductMOSFET Small Signal--
SeriesDMN5L06--
Transistor Type1 N-Channel--
Width1.3 mm--
BrandDiodes Incorporated--
Forward Transconductance Min200 mS--
Fall Time8.4 ns--
Product TypeMOSFET--
Rise Time1.8 ns--
Factory Pack Quantity3000--
SubcategoryMOSFETs--
Typical Turn Off Delay Time14.4 ns--
Typical Turn On Delay Time2.1 ns--
Unit Weight0.000212 oz--
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN5L06WK-7 MOSFET N-Channel
DMN5L06WK-7-F New and Original
DMN5L06WK-7-CUT TAPE New and Original
DMN5L06WK-7 Darlington Transistors MOSFET N-Channel
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