PartNumber | DMN66D0LDW-7 | DMN66D0LW-7 | DMN66D0LT-7 |
Description | MOSFET 250mW 60Vdss | MOSFET NMOS-SINGLE | MOSFET NMOS-Single |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | Y | Y |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-363-6 | SOT-323-3 | SOT-523-3 |
Number of Channels | 2 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | 60 V | 60 V |
Id Continuous Drain Current | 115 mA | 115 mA | 115 mA |
Rds On Drain Source Resistance | 6 Ohms | 6 Ohms | 6 Ohms |
Vgs Gate Source Voltage | 20 V | 20 V | 20 V |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 250 mW | 200 mW | 200 mW |
Configuration | Dual | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Reel | Reel | Reel |
Height | 1 mm | 1 mm | 0.75 mm |
Length | 2.2 mm | 2.15 mm | 1.6 mm |
Product | MOSFET Small Signal | MOSFET Small Signal | MOSFET Small Signal |
Series | DMN66 | DMN66 | DMN66 |
Transistor Type | 2 N-Channel | 1 N-Channel | 1 N-Channel |
Width | 1.35 mm | 1.3 mm | 0.8 mm |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 3000 | 3000 | 3000 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Typical Turn Off Delay Time | 33 ns | 33 ns | 33 ns |
Typical Turn On Delay Time | 10 ns | 10 ns | 10 ns |
Unit Weight | 0.000212 oz | 0.000176 oz | 0.000071 oz |
Vgs th Gate Source Threshold Voltage | - | 2 V | 2 V |