| PartNumber | DMN6040SE-13 | DMN6040SFDE-7 | DMN6040SFDEQ-13 |
| Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60 U-DFN2020-6 T&R 3K | MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET | MOSFET |
| Technology | Si | Si | Si |
| Package / Case | SOT-223-3 | U-DFN2020-E-6 | U-DFN2020-6 |
| Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
| Product Type | MOSFET | MOSFET | MOSFET |
| Factory Pack Quantity | 4000 | 3000 | 10000 |
| Subcategory | MOSFETs | MOSFETs | MOSFETs |
| RoHS | - | Y | Y |
| Mounting Style | - | SMD/SMT | SMD/SMT |
| Number of Channels | - | 1 Channel | 1 Channel |
| Transistor Polarity | - | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
| Id Continuous Drain Current | - | 5.3 A | 6.5 A |
| Rds On Drain Source Resistance | - | 30 mOhms | 38 mOhms |
| Vgs th Gate Source Threshold Voltage | - | 1 V | 1 V |
| Vgs Gate Source Voltage | - | 20 V | 20 V |
| Qg Gate Charge | - | 22.4 nC | 22.4 nC |
| Minimum Operating Temperature | - | - 55 C | - 55 C |
| Maximum Operating Temperature | - | + 150 C | + 150 C |
| Pd Power Dissipation | - | 660 mW | 2.03 W |
| Configuration | - | Single | Single |
| Channel Mode | - | Enhancement | Enhancement |
| Packaging | - | Reel | Reel |
| Series | - | DMN60 | - |
| Transistor Type | - | 1 N-Channel | 1 N-Channel |
| Fall Time | - | 4 ns | 4 ns |
| Rise Time | - | 8.1 ns | 8.1 ns |
| Typical Turn Off Delay Time | - | 20.1 ns | 20.1 ns |
| Typical Turn On Delay Time | - | 6.6 ns | 6.6 ns |
| Unit Weight | - | 0.000238 oz | 0.000229 oz |
| Qualification | - | - | AEC-Q101 |
| Forward Transconductance Min | - | - | 4.5 S |