 |  | | |
| PartNumber | DMN6040SSD-13 | DMN6040SSD | DMN6040SSD-13-CUT TAPE |
| Description | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | ||
| Manufacturer | Diodes Incorporated | - | - |
| Product Category | MOSFET | - | - |
| RoHS | Y | - | - |
| Technology | Si | - | - |
| Mounting Style | SMD/SMT | - | - |
| Package / Case | SO-8 | - | - |
| Number of Channels | 2 Channel | - | - |
| Transistor Polarity | N-Channel | - | - |
| Vds Drain Source Breakdown Voltage | 60 V | - | - |
| Id Continuous Drain Current | 5 A | - | - |
| Rds On Drain Source Resistance | 40 mOhms | - | - |
| Vgs th Gate Source Threshold Voltage | 1 V | - | - |
| Vgs Gate Source Voltage | 10 V | - | - |
| Qg Gate Charge | 22.4 nC | - | - |
| Minimum Operating Temperature | - 55 C | - | - |
| Maximum Operating Temperature | + 150 C | - | - |
| Pd Power Dissipation | 1.7 W | - | - |
| Configuration | Dual | - | - |
| Channel Mode | Enhancement | - | - |
| Packaging | Reel | - | - |
| Series | DMN6040 | - | - |
| Transistor Type | 2 N-Channel | - | - |
| Brand | Diodes Incorporated | - | - |
| Forward Transconductance Min | 4.5 S | - | - |
| Fall Time | 4 ns | - | - |
| Product Type | MOSFET | - | - |
| Rise Time | 8.1 ns | - | - |
| Factory Pack Quantity | 2500 | - | - |
| Subcategory | MOSFETs | - | - |
| Typical Turn Off Delay Time | 20.1 ns | - | - |
| Typical Turn On Delay Time | 6.6 ns | - | - |
| Unit Weight | 0.002610 oz | - | - |
| Manufacturer | Part # | Description | RFQ |
|---|---|---|---|
Diodes Incorporated |
DMN6040SSDQ-13 | MOSFET 60V Dual N-Ch FET 40mOhm 10V 5.0A | |
| DMN6040SSD-13 | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | ||
| DMN6040SSS-13 | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K | ||
| DMN6040SSD | New and Original | ||
| DMN6040SSD-13 | Trans MOSFET N-CH 60V 5A Automotive 8-Pin SO T/R | ||
| DMN6040SSD-13-CUT TAPE | New and Original | ||
| DMN6040SSDQ-13 | Trans MOSFET N-CH 60V 5A Automotive 8-Pin SO T/R | ||
| DMN6040SSS-13 | MOSFET MOSFET BVDSS: 41V-60 1V-60V SO-8 T&R 2.5K |