PartNumber | DMN6068SE-13 | DMN6068SE | DMN6068SE-1 |
Description | MOSFET ENHANCE MODE MOSFET 60V N-CHAN | MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous Drain Current Id:5.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.068ohm, Rds(on) Test Voltage Vg | |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | FETs - Single | FETs - Single |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | SOT-223-3 | - | - |
Number of Channels | 1 Channel | 1 Channel | 1 Channel |
Transistor Polarity | N-Channel | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | 60 V | - | - |
Id Continuous Drain Current | 5.6 A | - | - |
Rds On Drain Source Resistance | 68 mOhms | - | - |
Vgs th Gate Source Threshold Voltage | 1 V | - | - |
Vgs Gate Source Voltage | 10 V | - | - |
Qg Gate Charge | 10.3 nC | - | - |
Minimum Operating Temperature | - 55 C | - 55 C | - 55 C |
Maximum Operating Temperature | + 150 C | + 150 C | + 150 C |
Pd Power Dissipation | 2 W | - | - |
Configuration | Single | Single | Single |
Channel Mode | Enhancement | Enhancement | Enhancement |
Packaging | Tube | Digi-ReelR Alternate Packaging | Digi-ReelR Alternate Packaging |
Series | DMN6068 | DMN6068 | DMN6068 |
Transistor Type | 1 N-Channel | 1 N-Channel | 1 N-Channel |
Brand | Diodes Incorporated | - | - |
Forward Transconductance Min | 19.7 S | - | - |
Fall Time | 8.7 ns | - | - |
Product Type | MOSFET | - | - |
Rise Time | 10.8 ns | - | - |
Factory Pack Quantity | 4000 | - | - |
Subcategory | MOSFETs | - | - |
Typical Turn Off Delay Time | 11.9 ns | 11.9 ns | 11.9 ns |
Typical Turn On Delay Time | 3.6 ns | 3.6 ns | 3.6 ns |
Unit Weight | 0.003951 oz | 0.000282 oz | 0.000282 oz |
Package Case | - | TO-261-4, TO-261AA | TO-261-4, TO-261AA |
Operating Temperature | - | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
Mounting Type | - | Surface Mount | Surface Mount |
Supplier Device Package | - | SOT-223 | SOT-223 |
FET Type | - | MOSFET N-Channel, Metal Oxide | MOSFET N-Channel, Metal Oxide |
Power Max | - | 2W | 2W |
Drain to Source Voltage Vdss | - | 60V | 60V |
Input Capacitance Ciss Vds | - | 502pF @ 30V | 502pF @ 30V |
FET Feature | - | Standard | Standard |
Current Continuous Drain Id 25°C | - | 4.1A (Ta) | 4.1A (Ta) |
Rds On Max Id Vgs | - | 68 mOhm @ 12A, 10V | 68 mOhm @ 12A, 10V |
Vgs th Max Id | - | 3V @ 250μA | 3V @ 250μA |
Gate Charge Qg Vgs | - | 10.3nC @ 10V | 10.3nC @ 10V |
Pd Power Dissipation | - | 16 W | 16 W |
Id Continuous Drain Current | - | 5.6 A | 5.6 A |
Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
Vgs th Gate Source Threshold Voltage | - | 3 V | 3 V |
Rds On Drain Source Resistance | - | 68 mOhms | 68 mOhms |
Qg Gate Charge | - | 10.3 nC | 10.3 nC |