DMN6068SE

DMN6068SEQ-13 vs DMN6068SE-13

 
PartNumberDMN6068SEQ-13DMN6068SE-13
DescriptionMOSFET MOSFET BVDSS 41V-60VMOSFET ENHANCE MODE MOSFET 60V N-CHAN
ManufacturerDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFET
TechnologySiSi
Mounting StyleSMD/SMTSMD/SMT
Package / CaseSOT-223-3SOT-223-3
Number of Channels1 Channel1 Channel
Transistor PolarityN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V
Id Continuous Drain Current5.6 A5.6 A
Rds On Drain Source Resistance68 mOhms68 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V
Vgs Gate Source Voltage20 V10 V
Qg Gate Charge10.3 nC10.3 nC
Minimum Operating Temperature- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C
Pd Power Dissipation3.7 W2 W
ConfigurationSingleSingle
Channel ModeEnhancementEnhancement
QualificationAEC-Q101-
PackagingReelTube
Transistor Type1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min19.7 S19.7 S
Fall Time8.7 ns8.7 ns
Product TypeMOSFETMOSFET
Rise Time10.8 ns10.8 ns
Factory Pack Quantity40004000
SubcategoryMOSFETsMOSFETs
Typical Turn Off Delay Time11.9 ns11.9 ns
Typical Turn On Delay Time3.6 ns3.6 ns
RoHS-Y
Series-DMN6068
Unit Weight-0.003951 oz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN6068SEQ-13 MOSFET MOSFET BVDSS 41V-60V
DMN6068SE-13 MOSFET ENHANCE MODE MOSFET 60V N-CHAN
DMN6068SEQ-13 MOSFET BVDSS: 41V~60V SOT223 T&R 4K - Tape and Reel (Alt: DMN6068SEQ-13)
DMN6068SE-13 Darlington Transistors MOSFET ENHANCE MODE MOSFET 60V N-CHAN
DMN6068SE MOSFET, N CHANNEL, DIODE, 60V, 4.1A, SOT223, Transistor Polarity:N Channel, Continuous Drain Current Id:5.6A, Drain Source Voltage Vds:60V, On Resistance Rds(on):0.068ohm, Rds(on) Test Voltage Vg
DMN6068SE-1 New and Original
DMN6068SE-13DKR-ND New and Original
DMN6068SE-13-CUT TAPE New and Original
DMN6068SEQ-13-CUT TAPE New and Original
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