| PartNumber | DMN6068SEQ-13 | DMN6068SE-13 |
| Description | MOSFET MOSFET BVDSS 41V-60V | MOSFET ENHANCE MODE MOSFET 60V N-CHAN |
| Manufacturer | Diodes Incorporated | Diodes Incorporated |
| Product Category | MOSFET | MOSFET |
| Technology | Si | Si |
| Mounting Style | SMD/SMT | SMD/SMT |
| Package / Case | SOT-223-3 | SOT-223-3 |
| Number of Channels | 1 Channel | 1 Channel |
| Transistor Polarity | N-Channel | N-Channel |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V |
| Id Continuous Drain Current | 5.6 A | 5.6 A |
| Rds On Drain Source Resistance | 68 mOhms | 68 mOhms |
| Vgs th Gate Source Threshold Voltage | 1 V | 1 V |
| Vgs Gate Source Voltage | 20 V | 10 V |
| Qg Gate Charge | 10.3 nC | 10.3 nC |
| Minimum Operating Temperature | - 55 C | - 55 C |
| Maximum Operating Temperature | + 150 C | + 150 C |
| Pd Power Dissipation | 3.7 W | 2 W |
| Configuration | Single | Single |
| Channel Mode | Enhancement | Enhancement |
| Qualification | AEC-Q101 | - |
| Packaging | Reel | Tube |
| Transistor Type | 1 N-Channel | 1 N-Channel |
| Brand | Diodes Incorporated | Diodes Incorporated |
| Forward Transconductance Min | 19.7 S | 19.7 S |
| Fall Time | 8.7 ns | 8.7 ns |
| Product Type | MOSFET | MOSFET |
| Rise Time | 10.8 ns | 10.8 ns |
| Factory Pack Quantity | 4000 | 4000 |
| Subcategory | MOSFETs | MOSFETs |
| Typical Turn Off Delay Time | 11.9 ns | 11.9 ns |
| Typical Turn On Delay Time | 3.6 ns | 3.6 ns |
| RoHS | - | Y |
| Series | - | DMN6068 |
| Unit Weight | - | 0.003951 oz |