DMN61D9U

DMN61D9UW-7 vs DMN61D9U-13 vs DMN61D9UW-13

 
PartNumberDMN61D9UW-7DMN61D9U-13DMN61D9UW-13
DescriptionMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2AMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2AMOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseSOT-323-3SOT-23-3SOT-323-3
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V--
Id Continuous Drain Current340 mA--
Rds On Drain Source Resistance1.2 Ohms--
Vgs th Gate Source Threshold Voltage500 mV--
Vgs Gate Source Voltage20 V--
Qg Gate Charge400 pC--
Minimum Operating Temperature- 55 C--
Maximum Operating Temperature+ 150 C--
Pd Power Dissipation440 mW--
ConfigurationSingleSingleSingle
Channel ModeEnhancement--
PackagingReelReelReel
SeriesDMN61D9UDMN61D9UDMN61D9U
Transistor Type1 N-Channel1 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min200 mS--
Fall Time8.4 ns--
Product TypeMOSFETMOSFETMOSFET
Rise Time1.8 ns--
Factory Pack Quantity30001000010000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14.4 ns--
Typical Turn On Delay Time2.1 ns--
Unit Weight0.000176 oz0.000282 oz0.000176 oz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMN61D9UWQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMN61D9UWQ-7 MOSFET MOSFET BVDSS: 41V-60V
DMN61D9UW-7 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DMN61D9U-13 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DMN61D9UW-13 MOSFET N-Ch Enh Mode FET 60V 20Vgss 1.2A
DMN61D9UW-7 N-CHANNEL ENHANCEMENT MODE MOSFET
DMN61D9UDW-7 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DMN61D9U-7 MOSFET N-CH 60V 0.38A
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