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| PartNumber | DMN65D8LFB-7B | DMN65D8LFB-7 | DMN65D8LFB-7B/DIODES |
| Description | MOSFET MOSFET BVDSS: 61V-10 X1-DFN1006-3 T&R 10K | MOSFET 60V N-Ch Dual Enh 20Vgss 300mW Pd | |
| Manufacturer | Diodes Incorporated | Diodes Incorporated | - |
| Product Category | MOSFET | MOSFET | - |
| RoHS | Y | Y | - |
| Technology | Si | Si | - |
| Mounting Style | SMD/SMT | SMD/SMT | - |
| Package / Case | X1-DFN1006-3 | X1-DFN1006-3 | - |
| Number of Channels | 1 Channel | 1 Channel | - |
| Transistor Polarity | N-Channel | N-Channel | - |
| Vds Drain Source Breakdown Voltage | 60 V | 60 V | - |
| Id Continuous Drain Current | 400 mA | 400 mA | - |
| Rds On Drain Source Resistance | 3 Ohms | 3 Ohms | - |
| Vgs th Gate Source Threshold Voltage | 1.2 V | 1.2 V | - |
| Vgs Gate Source Voltage | 10 V | 20 V | - |
| Minimum Operating Temperature | - 55 C | - 55 C | - |
| Maximum Operating Temperature | + 150 C | + 150 C | - |
| Pd Power Dissipation | 840 mW | 430 mW | - |
| Configuration | Single | Single | - |
| Channel Mode | Enhancement | Enhancement | - |
| Packaging | Reel | Reel | - |
| Series | DMN65 | DMN65D | - |
| Transistor Type | 1 N-Channel | 1 N-Channel | - |
| Brand | Diodes Incorporated | Diodes Incorporated | - |
| Fall Time | 6.29 ns | 6.29 ns | - |
| Product Type | MOSFET | MOSFET | - |
| Rise Time | 3.15 ns | 3.15 ns | - |
| Factory Pack Quantity | 10000 | 3000 | - |
| Subcategory | MOSFETs | MOSFETs | - |
| Typical Turn Off Delay Time | 12.025 ns | 12.025 ns | - |
| Typical Turn On Delay Time | 3.27 ns | 3.27 ns | - |
| Qg Gate Charge | - | - | - |
| Forward Transconductance Min | - | - | - |
| Unit Weight | - | 0.000035 oz | - |