PartNumber | DMNH6012SPS-13 | DMNH6012LK3Q-13 | DMNH6012LK3-13 |
Description | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V | MOSFET MOSFET BVDSS: 41V-60V |
Manufacturer | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Category | MOSFET | MOSFET | MOSFET |
RoHS | Y | - | - |
Technology | Si | Si | Si |
Mounting Style | SMD/SMT | SMD/SMT | SMD/SMT |
Package / Case | PowerDI5060-8 | TO-252-3 | TO-252-3 |
Packaging | Reel | Reel | Reel |
Brand | Diodes Incorporated | Diodes Incorporated | Diodes Incorporated |
Product Type | MOSFET | MOSFET | MOSFET |
Factory Pack Quantity | 2500 | 2500 | 2500 |
Subcategory | MOSFETs | MOSFETs | MOSFETs |
Unit Weight | 0.003386 oz | 0.011993 oz | 0.011993 oz |
Number of Channels | - | 1 Channel | 1 Channel |
Transistor Polarity | - | N-Channel | N-Channel |
Vds Drain Source Breakdown Voltage | - | 60 V | 60 V |
Id Continuous Drain Current | - | 60 A | 60 A |
Rds On Drain Source Resistance | - | 8 mOhms | 8 mOhms |
Vgs th Gate Source Threshold Voltage | - | 1 V | 1 V |
Vgs Gate Source Voltage | - | 20 V | 20 V |
Qg Gate Charge | - | 35.2 nC | 35.2 nC |
Minimum Operating Temperature | - | - 55 C | - 55 C |
Maximum Operating Temperature | - | + 175 C | + 175 C |
Pd Power Dissipation | - | 3.8 W | 3.8 W |
Configuration | - | Single | Single |
Channel Mode | - | Enhancement | Enhancement |
Qualification | - | AEC-Q101 | - |
Transistor Type | - | 1 N-Channel | 1 N-Channel |
Fall Time | - | 5 ns | 5 ns |
Rise Time | - | 11.9 ns | 11.9 ns |
Typical Turn Off Delay Time | - | 16.5 ns | 16.5 ns |
Typical Turn On Delay Time | - | 6.4 ns | 6.4 ns |