DMNH6021

DMNH6021SPDQ-13 vs DMNH6021SPD-13 vs DMNH6021SK3-13

 
PartNumberDMNH6021SPDQ-13DMNH6021SPD-13DMNH6021SK3-13
DescriptionMOSFET MOSFET BVDSS: 41V-60VMOSFET MOSFET BVDSS: 41V-60VMOSFET MOSFET BVDSS: 41V-60V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CasePowerDI5060-C-8PowerDI5060-C-8TO-252-3
Number of Channels2 Channel2 Channel1 Channel
Transistor PolarityN-ChannelN-ChannelN-Channel
Vds Drain Source Breakdown Voltage60 V60 V60 V
Id Continuous Drain Current8.2 A8.2 A50 A
Rds On Drain Source Resistance15 mOhms15 mOhms13 mOhms
Vgs th Gate Source Threshold Voltage1 V1 V1 V
Vgs Gate Source Voltage20 V20 V20 V
Qg Gate Charge20.1 nC, 20.1 nC20.1 nC, 20.1 nC20.1 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 175 C+ 175 C+ 175 C
Pd Power Dissipation2.8 W2.8 W3.7 W
ConfigurationDualDualSingle
Channel ModeEnhancementEnhancementEnhancement
QualificationAEC-Q101--
PackagingReelReelReel
Transistor Type2 N-Channel2 N-Channel1 N-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Fall Time5.4 ns, 5.4 ns5.4 ns, 5.4 ns5.4 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time6 ns, 6 ns6 ns, 6 ns6 ns
Factory Pack Quantity250025002500
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time14.2 ns, 14.2 ns14.2 ns, 14.2 ns14.2 ns
Typical Turn On Delay Time4.4 ns, 4.4 ns4.4 ns, 4.4 ns4.4 ns
Unit Weight0.004092 oz0.004092 oz0.011993 oz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMNH6021SPDQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMNH6021SPSQ-13 MOSFET MOSFET BVDSS: 41V-60V
DMNH6021SPS-13 MOSFET MOSFET BVDSS: 41V-60V
DMNH6021SPD-13 MOSFET MOSFET BVDSS: 41V-60V
DMNH6021SK3-13 MOSFET MOSFET BVDSS: 41V-60V
DMNH6021SPDW-13 MOSFET MOSFET BVDSS 41V-60V
DMNH6021SPDWQ-13 MOSFET MOSFET BVDSS 41V-60V
DMNH6021SPDQ-13 Trans MOSFET N-CH 60V 8.2A T/R
DMNH6021SK3-13 Trans MOSFET N-CH 60V 50A 3-Pin(2+Tab) DPAK T/R
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