DMP101

DMP1011UCB9-7 vs DMP1011LFV-7 vs DMP1011LFV-13

 
PartNumberDMP1011UCB9-7DMP1011LFV-7DMP1011LFV-13
DescriptionMOSFET P-Ch Enh Mode FETMOSFET MOSFETBVDSS: 8V-24VMOSFET MOSFETBVDSS: 8V-24V
ManufacturerDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Product CategoryMOSFETMOSFETMOSFET
RoHSYYY
TechnologySiSiSi
Mounting StyleSMD/SMTSMD/SMTSMD/SMT
Package / CaseU-WLB1515-9PowerDI3333-8PowerDI3333-8
Number of Channels1 Channel1 Channel1 Channel
Transistor PolarityP-ChannelP-ChannelP-Channel
Vds Drain Source Breakdown Voltage8 V12 V12 V
Id Continuous Drain Current10 A19 A19 A
Rds On Drain Source Resistance8.2 mOhms9.8 mOhms9.8 mOhms
Vgs th Gate Source Threshold Voltage1.1 V1.2 V1.2 V
Vgs Gate Source Voltage6 V6 V6 V
Qg Gate Charge8.1 nC9.5 nC9.5 nC
Minimum Operating Temperature- 55 C- 55 C- 55 C
Maximum Operating Temperature+ 150 C+ 150 C+ 150 C
Pd Power Dissipation890 mW2.16 W2.16 W
ConfigurationSingleSingleSingle
Channel ModeEnhancementEnhancementEnhancement
PackagingReelReelReel
SeriesDMP1011--
Transistor Type1 P-Channel1 P-Channel1 P-Channel
BrandDiodes IncorporatedDiodes IncorporatedDiodes Incorporated
Forward Transconductance Min---
Fall Time22.7 ns3.9 ns3.9 ns
Product TypeMOSFETMOSFETMOSFET
Rise Time22.6 ns2.6 ns2.6 ns
Factory Pack Quantity300020003000
SubcategoryMOSFETsMOSFETsMOSFETs
Typical Turn Off Delay Time30.1 ns14.4 ns14.4 ns
Typical Turn On Delay Time6.2 ns6.3 ns6.3 ns
Unit Weight-0.002540 oz0.002540 oz
Manufacturer Part # Description RFQ
Diodes Incorporated
Diodes Incorporated
DMP1011UCB9-7 MOSFET P-Ch Enh Mode FET
DMP1011LFV-7 MOSFET MOSFETBVDSS: 8V-24V
DMP1011LFV-13 MOSFET MOSFETBVDSS: 8V-24V
DMP1012USS-13 MOSFET MOSFET BVDSS: 8V-24V
DMP1012UFDF-7 MOSFET MOSFET BVDSS: 8V-24V
DMP1012UFDF-13 MOSFET MOSFET BVDSS: 8V-24V
DMP1011UCB9-7 P-CHANNEL ENHANCEMENT MODE MOSFET
DMP1012UCB9 New and Original
DMP1018UCB9-7 New and Original
DMP1012UFDF-13 Enhancement Mode Transistor MOSFET P-Channel -12V -20A 6-Pin U-DFN2020 T/R (Alt: DMP1012UFDF-13)
DMP1012UCB9-7 MOSFET MOSFET
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